scholarly journals Retraction: “Large Tunnel Magnetoresistance of 1056% at Room Temperature in MgO Based Double Barrier Magnetic Tunnel Junction”

2010 ◽  
Vol 4 (1) ◽  
pp. 019201 ◽  
Author(s):  
Hiroshi Naganuma ◽  
Lixian Jiang ◽  
Mikihiko Oogane ◽  
Yasuo Ando
Keyword(s):  
Tunnel Junction ◽  
Room Temperature ◽  
Magnetic Tunnel Junction ◽  
Double Barrier ◽  
Tunnel Magnetoresistance ◽  
Large Tunnel

Room temperature spin valve effect in the NiFe/Gr–hBN/Co magnetic tunnel junction

2016 ◽  
Vol 4 (37) ◽  
pp. 8711-8715 ◽  
Author(s):  
Muhammad Zahir Iqbal ◽  
Salma Siddique ◽  
Ghulam Hussain ◽  
Muhammad Waqas Iqbal
Keyword(s):  
Boron Nitride ◽  
Tunnel Junction ◽  
Room Temperature ◽  
Hexagonal Boron Nitride ◽  
Spin Valve ◽  
Magnetic Tunnel Junction ◽  
Valve Effect ◽  
First Time

Graphene and hexagonal boron nitride (hBN) have shown fascinating features in spintronics due to their metallic and tunneling behaviors, respectively. In this work, we report for the first time room temperature spin valve effect in NiFe/Gr–hBN/Co configuration.

High Tunnel Magnetoresistance in Mo/CoFe/MgO Magnetic Tunnel Junction: A First-Principles Study

2017 ◽  
Vol 53 (11) ◽  
pp. 1-4 ◽  
Author(s):  
Jiaqi Zhou ◽  
Weisheng Zhao ◽  
Shouzhong Peng ◽  
Junfeng Qiao ◽  
Jacques-Olivier Klein ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
First Principles ◽  
Magnetic Tunnel Junction ◽  
High Tunnel ◽  
Tunnel Magnetoresistance ◽  
First Principles Study

Room-temperature side-gate-induced current modulation in a magnetic tunnel junction with an oxide-semiconductor barrier for vertical spin MOSFET operation

2019 ◽  
Vol 12 (2) ◽  
pp. 023009 ◽  
Author(s):  
Toshiki Kanaki ◽  
Shin Matsumoto ◽  
Sai Krishna Narayananellore ◽  
Hidekazu Saito ◽  
Yoshihiro Iwasa ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Room Temperature ◽  
Magnetic Tunnel Junction ◽  
Oxide Semiconductor ◽  
Induced Current ◽  
Current Modulation ◽  
Temperature Side
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