Large Spin Accumulation with Long Spin Diffusion Length in Cu/MgO/Permalloy Lateral Spin Valves

2011 ◽  
Vol 4 (6) ◽  
pp. 063002 ◽  
Author(s):  
Taro Wakamura ◽  
Kohei Ohnishi ◽  
Yasuhiro Niimi ◽  
YoshiChika Otani
Keyword(s):  
Spin Diffusion ◽  
Diffusion Length ◽  
Spin Valves ◽  
Spin Accumulation ◽  
Spin Diffusion Length ◽  
Large Spin

Manipulating Spin Current in the Magnetic Nanopillar

2007 ◽  
Vol 7 (1) ◽  
pp. 259-264 ◽  
Author(s):  
T. Yang ◽  
A. Hirohata ◽  
T. Kimura ◽  
Y. Otani
Keyword(s):  
Layer Thickness ◽  
Spin Relaxation ◽  
Spin Diffusion ◽  
Diffusion Length ◽  
Ferromagnetic Layer ◽  
Spin Current ◽  
Spin Accumulation ◽  
Magnetization Switching ◽  
Capping Layer ◽  
Spin Diffusion Length

Because of the capability to switch the magnetization of a nanoscale magnet, the spin transfer effect is critical for the application of magnetic random access memory. For this purpose, it is important to enhance the spin current carried by the charge current. Calculations based on the diffusive spin-dependent transport equations reveal that the magnitude of spin current can be tuned by modifying the ferromagnetic layer and the spin relaxation process in the device. Increasing the ferromagnetic layer thickness is found to enhance both the spin current and the spin accumulation. On the other hand, a strong spin relaxation in the capping layer also increases the spin current but suppresses the spin accumulation. To demonstrate the theoretical results, nanopillar structures with the size of ∼100 nm are fabricated and the current-induced magnetization switching behaviors are experimentally studied. When the ferromagnetic layer thickness is increased from 3 nm to 20 nm, the critical switching current for the current-induced magnetization switching is significantly reduced, indicating the enhancement of the spin current. When the Au capping layer with a short spin-diffusion length replaces the Cu capping layer with a long spin-diffusion length, the reduction of the critical switching current is also observed.

Large Spin Diffusion Length in an Amorphous Organic Semiconductor

2008 ◽  
Vol 100 (22) ◽  
Author(s):  
J. H. Shim ◽  
K. V. Raman ◽  
Y. J. Park ◽  
T. S. Santos ◽  
G. X. Miao ◽  
...  
Keyword(s):  
Organic Semiconductor ◽  
Spin Diffusion ◽  
Diffusion Length ◽  
Spin Diffusion Length ◽  
Large Spin

Room-temperature spin transport in InAs nanowire lateral spin valve

RSC Advances ◽  
2016 ◽  
Vol 6 (79) ◽  
pp. 75736-75740 ◽  
Author(s):  
Zhicheng Wang ◽  
Dong Pan ◽  
Le Wang ◽  
Tingwen Wang ◽  
Bing Zhao ◽  
...  
Keyword(s):  
Room Temperature ◽  
Spin Transport ◽  
Spin Diffusion ◽  
Diffusion Length ◽  
Spin Valve ◽  
Spintronic Devices ◽  
Spin Diffusion Length ◽  
Nanowire Device ◽  
Large Spin

We report room temperature spin transport in an InAs nanowire device. A large spin signal of 35 kΩ and long spin diffusion length of 1.9 μm are achieved. We believe that these results open a practical way to design InAs NW based spintronic devices.

scholarly journals Spin diffusion length of Permalloy using spin absorption in lateral spin valves

2017 ◽  
Vol 111 (8) ◽  
pp. 082407 ◽  
Author(s):  
Edurne Sagasta ◽  
Yasutomo Omori ◽  
Miren Isasa ◽  
YoshiChika Otani ◽  
Luis E. Hueso ◽  
...  
Keyword(s):  
Spin Diffusion ◽  
Diffusion Length ◽  
Spin Valves ◽  
Spin Diffusion Length

Evaluation of spin diffusion length of AuW alloys using spin absorption experiments in the limit of large spin-orbit interactions

2015 ◽  
Vol 92 (21) ◽  
Author(s):  
P. Laczkowski ◽  
H. Jaffrès ◽  
W. Savero-Torres ◽  
J.-C. Rojas-Sánchez ◽  
Y. Fu ◽  
...  
Keyword(s):  
Spin Diffusion ◽  
Diffusion Length ◽  
Spin Orbit ◽  
Spin Diffusion Length ◽  
Spin Orbit Interactions ◽  
Large Spin

Enhanced spin diffusion length by suppressing spin-flip scattering in lateral spin valves

Rare Metals ◽  
2014 ◽  
Vol 34 (3) ◽  
pp. 156-159
Author(s):  
Lin-Jing Pan ◽  
Le Wang ◽  
Li-Yuan Zhang
Keyword(s):  
Spin Diffusion ◽  
Diffusion Length ◽  
Spin Valves ◽  
Spin Flip ◽  
Spin Diffusion Length

FABRICATION OF LATERAL ORGANIC SPIN VALVES BASED ON La0.7Sr0.3MnO3 ELECTRODES

SPIN ◽  
2014 ◽  
Vol 04 (02) ◽  
pp. 1440008 ◽  
Author(s):  
S. W. JIANG ◽  
P. WANG ◽  
S. C. JIANG ◽  
B. B. CHEN ◽  
M. WANG ◽  
...  
Keyword(s):  
Spin Diffusion ◽  
Diffusion Length ◽  
Spin Valve ◽  
Spin Valves ◽  
Electrode Spacing ◽  
Half Metallic ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Spin Diffusion Length ◽  
Current Behavior

We report the successful fabrication of lateral organic spin valves (OSVs) using polycrystalline pentacene as spacer and half-metallic La 0.7 Sr 0.3 MnO 3 (LSMO) as two electrodes. The distance between two electrodes ranges from 30 nm to 100 nm. The current–voltage characteristics follow the power law relation, which are attributed to the space charge limited current behavior. The devices with a spacing of 30 nm exhibits clear spin-valve characteristics with a magnetoresistance (MR) ratio of ~ 2% at 9 K. The MR effects disappear for electrode spacing about 100 nm, suggesting that the spin diffusion length is less than 100 nm.

Experimental estimation of the spin diffusion length in undoped p-Ge on Fe3Si using vertical spin-valve devices

2021 ◽  
Vol 129 (1) ◽  
pp. 013901
Author(s):  
A. Yamada ◽  
M. Yamada ◽  
T. Shiihara ◽  
M. Ikawa ◽  
S. Yamada ◽  
...  
Keyword(s):  
Spin Diffusion ◽  
Diffusion Length ◽  
Spin Valve ◽  
Experimental Estimation ◽  
Spin Diffusion Length
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