Enhanced spin diffusion length by suppressing spin-flip scattering in lateral spin valves

Rare Metals ◽  
2014 ◽  
Vol 34 (3) ◽  
pp. 156-159
Author(s):  
Lin-Jing Pan ◽  
Le Wang ◽  
Li-Yuan Zhang
Keyword(s):  
Spin Diffusion ◽  
Diffusion Length ◽  
Spin Valves ◽  
Spin Flip ◽  
Spin Diffusion Length

Large Spin Accumulation with Long Spin Diffusion Length in Cu/MgO/Permalloy Lateral Spin Valves

2011 ◽  
Vol 4 (6) ◽  
pp. 063002 ◽  
Author(s):  
Taro Wakamura ◽  
Kohei Ohnishi ◽  
Yasuhiro Niimi ◽  
YoshiChika Otani
Keyword(s):  
Spin Diffusion ◽  
Diffusion Length ◽  
Spin Valves ◽  
Spin Accumulation ◽  
Spin Diffusion Length ◽  
Large Spin

scholarly journals Spin diffusion length of Permalloy using spin absorption in lateral spin valves

2017 ◽  
Vol 111 (8) ◽  
pp. 082407 ◽  
Author(s):  
Edurne Sagasta ◽  
Yasutomo Omori ◽  
Miren Isasa ◽  
YoshiChika Otani ◽  
Luis E. Hueso ◽  
...  
Keyword(s):  
Spin Diffusion ◽  
Diffusion Length ◽  
Spin Valves ◽  
Spin Diffusion Length

FABRICATION OF LATERAL ORGANIC SPIN VALVES BASED ON La0.7Sr0.3MnO3 ELECTRODES

SPIN ◽  
2014 ◽  
Vol 04 (02) ◽  
pp. 1440008 ◽  
Author(s):  
S. W. JIANG ◽  
P. WANG ◽  
S. C. JIANG ◽  
B. B. CHEN ◽  
M. WANG ◽  
...  
Keyword(s):  
Spin Diffusion ◽  
Diffusion Length ◽  
Spin Valve ◽  
Spin Valves ◽  
Electrode Spacing ◽  
Half Metallic ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Spin Diffusion Length ◽  
Current Behavior

We report the successful fabrication of lateral organic spin valves (OSVs) using polycrystalline pentacene as spacer and half-metallic La 0.7 Sr 0.3 MnO 3 (LSMO) as two electrodes. The distance between two electrodes ranges from 30 nm to 100 nm. The current–voltage characteristics follow the power law relation, which are attributed to the space charge limited current behavior. The devices with a spacing of 30 nm exhibits clear spin-valve characteristics with a magnetoresistance (MR) ratio of ~ 2% at 9 K. The MR effects disappear for electrode spacing about 100 nm, suggesting that the spin diffusion length is less than 100 nm.

Experimental estimation of the spin diffusion length in undoped p-Ge on Fe3Si using vertical spin-valve devices

2021 ◽  
Vol 129 (1) ◽  
pp. 013901
Author(s):  
A. Yamada ◽  
M. Yamada ◽  
T. Shiihara ◽  
M. Ikawa ◽  
S. Yamada ◽  
...  
Keyword(s):  
Spin Diffusion ◽  
Diffusion Length ◽  
Spin Valve ◽  
Experimental Estimation ◽  
Spin Diffusion Length

scholarly journals Self-consistent determination of spin Hall angle and spin diffusion length in Pt and Pd: The role of the interface spin loss

2018 ◽  
Vol 4 (6) ◽  
pp. eaat1670 ◽  
Author(s):  
Xinde Tao ◽  
Qi Liu ◽  
Bingfeng Miao ◽  
Rui Yu ◽  
Zheng Feng ◽  
...  
Keyword(s):  
Spin Diffusion ◽  
Diffusion Length ◽  
Self Consistent ◽  
Hall Angle ◽  
Spin Diffusion Length

scholarly journals Long Spin Diffusion Length in Few-Layer Graphene Flakes

2016 ◽  
Vol 117 (14) ◽  
Author(s):  
W. Yan ◽  
L. C. Phillips ◽  
M. Barbone ◽  
S. J. Hämäläinen ◽  
A. Lombardo ◽  
...  
Keyword(s):  
Spin Diffusion ◽  
Diffusion Length ◽  
Layer Graphene ◽  
Graphene Flakes ◽  
Spin Diffusion Length ◽  
Few Layer Graphene

Spin Pumping in a Ferromagnetic/Nonmagnetic/Spin-Sink Trilayer Film: Spin Current Termination

2012 ◽  
Vol 508 ◽  
pp. 266-270 ◽  
Author(s):  
K. Harii ◽  
Z. Qiu ◽  
T. Iwashita ◽  
Y. Kajiwara ◽  
K. Uchida ◽  
...  
Keyword(s):  
Diffusion Equation ◽  
Hall Effect ◽  
Spin Diffusion ◽  
Diffusion Length ◽  
Spin Current ◽  
Interlayer Thickness ◽  
Spin Pumping ◽  
Charge Current ◽  
Inverse Spin Hall Effect ◽  
Spin Diffusion Length

A Spin Current Generated by Spin Pumping in a Ferromagnetic/Nonmagnetic/Spin-Sink Trilayer Film Is Calculated Based on the Spin Pumping Theory and the Standard Spin Diffusion Equation. By Attaching the Spin-Sink Layer, the Injected Spin Current Is Drastically Enhanced when the Interlayer Thickness Is Shorter than the Spin Diffusion Length of the Interlayer. We Also Provided the Formula of the Charge Current which Is Induced from the Pumped Spin Current via the Inverse Spin-Hall Effect.

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