High-Power Continuous-Wave Operation of BeZnCdSe Single-Quantum-Well Green Laser Diodes

2012 ◽  
Vol 5 (6) ◽  
pp. 062101 ◽  
Author(s):  
Sumiko Fujisaki ◽  
Jun-ichi Kasai ◽  
Ryouichi Akimoto ◽  
Shigehisa Tanaka ◽  
Shinji Tsuji ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Green Laser ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Continuous Wave Operation

High power 630 nm band laser diodes with strain-compensated single quantum well active layer

1997 ◽  
Vol 33 (12) ◽  
pp. 1084 ◽  
Author(s):  
R. Hiroyama ◽  
T. Uetani ◽  
Y. Bessho ◽  
M. Shono ◽  
M. Sawada ◽  
...  
Keyword(s):  
Quantum Well ◽  
Active Layer ◽  
High Power ◽  
Laser Diodes ◽  
Single Quantum ◽  
Single Quantum Well

4 W quasi-continuous-wave output power from 2 μm AlGaAsSb/InGaAsSb single-quantum-well broadened waveguide laser diodes

1997 ◽  
Vol 70 (22) ◽  
pp. 2931-2933 ◽  
Author(s):  
D. Z. Garbuzov ◽  
R. U. Martinelli ◽  
H. Lee ◽  
R. J. Menna ◽  
P. K. York ◽  
...  
Keyword(s):  
Quantum Well ◽  
Output Power ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Waveguide Laser ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Continuous Wave Output Power

Modulation bandwidth of high‐power single quantum well buried heterostructure InGaAsP/InP (λ=1.3 μm) and InGaAsP/GaAs (λ=0.8 μm) laser diodes

1996 ◽  
Vol 68 (9) ◽  
pp. 1186-1188 ◽  
Author(s):  
I. E. Berishev ◽  
A. Yu. Gorbachev ◽  
V. A. Mishournyi ◽  
N. D. Ilyinskaya ◽  
A. L. Stankevich ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Laser Diodes ◽  
Modulation Bandwidth ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Buried Heterostructure

Improved Characteristic Temperature (TO) of a 1.3-μm GaInNAs/GaAs Single-Quantum-Well Laser Diode Through Thermal Annealing

1999 ◽  
Vol 597 ◽  
Author(s):  
T. Kitatani ◽  
M. Kondow ◽  
K. Nakahara ◽  
K. Uomi ◽  
T. Tanaka
Keyword(s):  
Quantum Well ◽  
Thermal Annealing ◽  
Laser Diode ◽  
Continuous Wave ◽  
Characteristic Temperature ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Lasing Wavelength ◽  
Quantum Well Laser ◽  
Continuous Wave Operation

AbstractThrough optimal thermal annealing of the active region of a 1.3 μm GaInNAs/GaAs single-quantum-well laser diode, we obtained a characteristic temperature (T0) of 215 K under pulsed operation from 20°C to 80°C. This is the highest yet reported value for a 1.3-μm semiconductor laser. Even under continuous-wave operation, the T0 was as high as 147 K. The lasing-wavelength change with temperature was as small as 0.39 nm/°C, indicating the excellent stability for a GalnNAs laser diode with T0 of over 200 K. These results demonstrate that GaInNAs is a promising material for fabricating long-wavelength laser diodes used for opticalfiber communications.

scholarly journals Tomographic Characterization of Dislocations in Failure Regions of Broad Area InGaAs/AlGaAs Strained Layer Single Quantum Well High Power Laser Diodes

2009 ◽  
Vol 15 (S2) ◽  
pp. 598-599
Author(s):  
B Foran ◽  
N Ives ◽  
T Yeoh ◽  
M Brodie ◽  
Y Sin ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Laser Diodes ◽  
Single Quantum ◽  
High Power Laser ◽  
Power Laser ◽  
Broad Area ◽  
Single Quantum Well ◽  
Strained Layer

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009

545 nm Room-Temperature Continuous-Wave Operation of BeZnCdSe Quantum-Well Green Laser Diodes with Low Threshold Current Density

2010 ◽  
Vol 3 (9) ◽  
pp. 091201 ◽  
Author(s):  
Jun-ichi Kasai ◽  
Ryouichi Akimoto ◽  
Haruhiko Kuwatsuka ◽  
Toshifumi Hasama ◽  
Hiroshi Ishikawa ◽  
...  
Keyword(s):  
Quantum Well ◽  
Current Density ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Threshold Current ◽  
Green Laser ◽  
Threshold Current Density ◽  
Continuous Wave Operation ◽  
Low Threshold
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