Determination of the Atomic Scattering Factors of Germanium by Means of the Pendellösung-Beat Measurement Using White Radiations

1981 ◽  
Vol 20 (7) ◽  
pp. 1183-1189 ◽  
Author(s):  
Toshihiko Takama ◽  
Shin'ichi Sato
Keyword(s):  
2016 ◽  
Vol 31 (3) ◽  
pp. 168-175 ◽  
Author(s):  
Daniel M. Többens ◽  
Rene Gunder ◽  
Galina Gurieva ◽  
Julien Marquardt ◽  
Kai Neldner ◽  
...  

Kesterite-type compound semiconductors, containing copper and zinc, have photovoltaic properties depending on cation distribution in the crystal structure. Anomalous diffraction allows discrimination of isoelectronic cations, in principle allowing a straightforward determination of site occupation factors from data collected at multiple energies close to the X-ray absorption edges of copper and zinc. However, extremely strong correlation between structural parameters precludes this. We present a recipe based on the direct dependency between refined occupation factors and atomic scattering power, which allows to lift the correlations and to detect issues of individual diffraction patterns or assumptions in the model, thereby allowing for reliable quantitative analysis of the Cu/Zn distribution.


1975 ◽  
Vol 39 (5) ◽  
pp. 1277-1281 ◽  
Author(s):  
Osamu Terasaki ◽  
Yūji Uchida ◽  
Denjiro Watanabe

1960 ◽  
Vol 31 (6) ◽  
pp. 1130-1131 ◽  
Author(s):  
D. R. Chipman ◽  
Arthur Paskin
Keyword(s):  

1970 ◽  
Vol 26 (5) ◽  
pp. 514-518 ◽  
Author(s):  
E. Persson ◽  
E. Zielińska-Rohozińska ◽  
L. Gerward

2011 ◽  
Vol 2011 ◽  
pp. 1-23 ◽  
Author(s):  
Maheswar Nayak ◽  
Gyanendra S. Lodha

Fine structure features of energy-dependent atomic scattering factor near the atomic absorption edge, are used for structural analysis of low-Z containing thin film structures. The scattering contrast undergoes large and abrupt change as the incident photon energy approaches the natural frequency of the atom and is sensitive to variation in atomic composition and atomic density. Soft X-ray resonant reflectivity is utilized for determination of composition at the buried interfaces with subnanometer sensitivity. This is demonstrated through characterization of Mo/Si multilayers near Si L-edge. We also demonstrate the possibility of probing variation of atomic density in thin films, through the characterization of Fe/B4C structure, near B K-edge. Sensitivity of soft X-ray resonant reflectivity to native oxide is demonstrated through characterization of BN films near B K-edge.


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