Deep Trap States in Si3N4Layer on Si Substrate

1981 ◽  
Vol 20 (5) ◽  
pp. 917-923 ◽  
Author(s):  
Shizuo Fujita ◽  
Michinori Nishihara ◽  
Won-Lon Hoi ◽  
Akio Sasaki
Keyword(s):  
Deep Trap ◽  
Trap States ◽  
Si Substrate

scholarly journals Colloidal thallium halide nanocrystals with reasonable luminescence, carrier mobility and diffusion length

2017 ◽  
Vol 8 (6) ◽  
pp. 4602-4611 ◽  
Author(s):  
Wasim J. Mir ◽  
Avinash Warankar ◽  
Ashutosh Acharya ◽  
Shyamashis Das ◽  
Pankaj Mandal ◽  
...  
Keyword(s):  
Carrier Mobility ◽  
Diffusion Length ◽  
Deep Trap ◽  
Blue Luminescence ◽  
Trap States ◽  
High Carrier Mobility ◽  
High Carrier ◽  
And Diffusion

Colloidal TlI and TlBr nanocrystals are prepared, which show violet-blue luminescence, high carrier mobility and long diffusion lengths thus suggesting the suppression of deep-trap states.

Deep Surface Trap States at ZnO Nanorods Arrays

2014 ◽  
Vol 1672 ◽  
Author(s):  
Christa Bünzli ◽  
David Parker ◽  
Kieren Bradley ◽  
David J. Fermín
Keyword(s):  
Zno Nanorods ◽  
Sharp Decrease ◽  
Deep Trap ◽  
Flat Band ◽  
Flat Band Potential ◽  
Trap States ◽  
Surface Trap ◽  
Deep Surface ◽  
Deep Electron Trap ◽  
Lock In

ABSTRACTDeep surface trap states present in hydrothermally grown ZnO nanorod (NR) arrays are monitored by photoelectrochemical and impedance spectroscopy. NR arrays were grown on a thin compact ZnO film deposited by pulsed laser deposition. Photocurrent responses upon square-wave illumination and lock-in detection of the as-grown NR arrays in the presence of Na2SO3 at pH 10 were characterized by a complex potential dependence indicating the presence of deep trap states. At a given frequency of light perturbation, the photocurrent amplitude increases as the potential bias is shifted towards values more positive than the flat band potential. Increasing the potential further than 0.8 V positive to the flat band potential leads to a decrease in the photocurrent amplitude. The potential of maximum photocurrent amplitude overlaps with a sharp decrease in the interfacial capacitance. The dependence of the photocurrent amplitude on bias potential strongly suggests the presence of deep electron trap states. The effect of the deep trap states are minimized by annealing of the NR arrays in air at 340° C.

Trap-Induced Dispersive Transport and Dielectric Loss in PbS Nanoparticle Films

2017 ◽  
Vol 231 (1) ◽  
Author(s):  
Alina Chanaewa ◽  
Katharina Poulsen ◽  
Alexander Gräfe ◽  
Christoph Gimmler ◽  
Elizabeth von Hauff
Keyword(s):  
Dielectric Loss ◽  
Deep Trap ◽  
State Density ◽  
Trap States ◽  
Trap State ◽  
Dispersive Transport ◽  
Surface Trap ◽  
Different Types ◽  
State Densities ◽  
Pbs Nanoparticle

AbstractIn this work, we investigate the electrical and dielectric response of lead sulfide (PbS) nanoparticle (NP) films with impedance spectroscopy. In particular, the influence of the ligand passivation on the surface trap state density of PbS NPs is demonstrated by comparing two different types of ligands: ethane-1,2-dithiol (EDT) and 3-sulfanylpropanoic acid (MPA). We observe that the MPA treatment passivates the PbS surface more efficiently than EDT. By analyzing the dielectric loss spectra, we are able to visualize shallow trap states in the bulk of PbS-EDT films and correlate this with the dispersive response observed in the impedance spectra. Evidence of deep trap states is revealed for both PbS-EDT and PbS-MPA diodes. Under illumination, the PbS-MPA and PbS-EDT films demonstrate almost identical trap profiles, showing solely the deep trap state densities. We conclude that the deep traps are related to the stoichiometry of the PbS NPs.

Variations of trap states and dangling bonds in CVD Si3N4 layer on Si substrate by NH3/SiH4 ratio

1982 ◽  
Vol 11 (4) ◽  
pp. 795-812 ◽  
Author(s):  
Shizuo Fujita ◽  
Hideo Toyoshima ◽  
Michinori Nishihara ◽  
Akio Sasaki
Keyword(s):  
Trap States ◽  
Dangling Bonds ◽  
Si Substrate ◽  
Si3n4 Layer

Degradation of encapsulated perovskite solar cells driven by deep trap states and interfacial deterioration

2018 ◽  
Vol 6 (1) ◽  
pp. 162-170 ◽  
Author(s):  
Dhruba B. Khadka ◽  
Yasuhiro Shirai ◽  
Masatoshi Yanagida ◽  
Kenjiro Miyano
Keyword(s):  
Solar Cells ◽  
Perovskite Solar Cells ◽  
Deep Trap ◽  
Device Performance ◽  
Trap States

The degradation of perovskite device performance is found to be driven by interfacial deterioration in the device and induced deep trap assisted recombination in the perovskite with aging.

scholarly journals Complexity at simple interfaces: Dynamically generated deep trap states at the noble-metal/alkali-halide interface

2018 ◽  
Vol 97 (7) ◽  
Author(s):  
David E. Suich ◽  
Benjamin W. Caplins ◽  
Alex J. Shearer ◽  
Charles B. Harris
Keyword(s):  
Noble Metal ◽  
Alkali Halide ◽  
Deep Trap ◽  
Trap States
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