Si Surface Cleaning and Epitaxial Growth of GaAs on Si by Electron Cyclotron Resonance Plasma‐Excited Molecular‐Beam‐Epitaxy at Low Temperatures

1989 ◽  
Vol 136 (11) ◽  
pp. 3459-3462 ◽  
Author(s):  
Tomohiro Shibata ◽  
Naoto Kondo ◽  
Yasushi Nanishi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Low Temperatures ◽  
Cyclotron Resonance ◽  
Molecular Beam ◽  
Electron Cyclotron Resonance ◽  
Surface Cleaning ◽  
Electron Cyclotron ◽  
Gaas On Si ◽  
Resonance Plasma

Epitaxial Growth of GaN on Sapphire (0001) Substrates by Electron Cyclotron Resonance Molecular Beam Epitaxy

1995 ◽  
Vol 34 (Part 2, No. 2B) ◽  
pp. L236-L239 ◽  
Author(s):  
Sung Hwan Cho ◽  
Hirosi Sakamoto ◽  
Katsuhiro Akimoto ◽  
Yoshitaka Okada ◽  
Mitsuo Kawabe
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Cyclotron Resonance ◽  
Molecular Beam ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron
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