A Model for DX Centers: Bond Reconstruction due to Local Random Donor-Host Atom Configurations in Mixed Semiconductor Alloys

1985 ◽  
Vol 24 (Part 2, No. 12) ◽  
pp. L928-L931 ◽  
Author(s):  
Keisuke L. I. Kobayashi ◽  
Yoko Uchida ◽  
Hisao Nakashima
Keyword(s):  
Semiconductor Alloys ◽  
Dx Centers ◽  
Host Atom

Laplace Transform DLTS Studies of the DX Centers in GaSb and AlGaAs

1992 ◽  
Vol 83-87 ◽  
pp. 769-774 ◽  
Author(s):  
L. Dobaczewski ◽  
I.D. Hawkins ◽  
P. Kaczor ◽  
M. Missous ◽  
I. Poole ◽  
...  
Keyword(s):  
Laplace Transform ◽  
Dx Centers

Generation–recombination noise of DX centers in AlN:Si

2001 ◽  
Vol 79 (15) ◽  
pp. 2396-2398 ◽  
Author(s):  
S. T. B. Goennenwein ◽  
R. Zeisel ◽  
O. Ambacher ◽  
M. S. Brandt ◽  
M. Stutzmann ◽  
...  
Keyword(s):  
Dx Centers

A Dynamic Model of III-V Ternary Semiconductor Alloys in the Epitaxial Growth

1994 ◽  
Vol 340 ◽  
Author(s):  
Bing-Lin Gu ◽  
Jing-Zhi Yu ◽  
Xiao Hu ◽  
Kaoru Ohno ◽  
Yoshiyuki Kawazoe
Keyword(s):  
Dynamic Model ◽  
Ground State ◽  
Wave Method ◽  
Semiconductor Alloys ◽  
Concentration Wave ◽  
Surface Layers ◽  
Ordered Structures ◽  
Effective Interactions ◽  
Ternary Semiconductor ◽  
The Difference

ABSTRACTA concentration wave method for several interpenetrating Bravais sublattices is presented by considering the intralayer and interlayer effective interactions and the difference between the surface layers and the deeper layers in III – V alloys. The ground state ordered structures of ternary III – V semiconductor alloys are deduced and a dynamic model is established.

Investigation of Traps in AlGaN/GaN Heterostructures by Ultrasonic Vibrations

2021 ◽  
Vol 66 (12) ◽  
pp. 1058
Author(s):  
V.V. Kaliuzhnyi ◽  
O.I. Liubchenko ◽  
M.D. Tymochko ◽  
Y.M. Olikh ◽  
V.P. Kladko ◽  
...  
Keyword(s):  
Carrier Density ◽  
Electron Gas ◽  
Two Dimensional ◽  
Ultrasonic Vibrations ◽  
Persistent Photoconductivity ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dx Centers ◽  
Dimensional Electron Gas

A method of dynamic deformations has been proposed as a useful informative tool in the characterization of transportation properties of a two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures. It is found that the exposing of a sample to ultrasonic vibrations results in the persistent acousto-conductivity (PAC) which was observed up to room temperatures. The PAC behaves itself like persistent photoconductivity (PPC), and the carrier density in the 2DEG channel is primarily contributed by the transfer of electrons excited from traps (like DX centers) as a result of their reconstruction under the ultrasonic loading.

Emission energies of Si-DX centers in various AlGaAs microstructures

1995 ◽  
Vol 56 (3-4) ◽  
pp. 599-602
Author(s):  
E. Litwin-Staszewska ◽  
R. Piotrzkowski ◽  
S. Contreras ◽  
F. Kobbi ◽  
V. Mosser ◽  
...  
Keyword(s):  
Dx Centers
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