Interfacial Charge and Its Effects on Mobility and Carrier Concentration for High-Purity GaInAs Grown by Metalorganic Chemical Vapor Deposition

1990 ◽  
Vol 29 (Part 1, No. 8) ◽  
pp. 1431-1434 ◽  
Author(s):  
Kazuhiro Eguchi ◽  
Mitsuhiro Kushibe ◽  
Masahisa Funamizu ◽  
Yasuo Ohba
Keyword(s):  
Chemical Vapor Deposition ◽  
Carrier Concentration ◽  
Vapor Deposition ◽  
High Purity ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Interfacial Charge ◽  
Metalorganic Chemical

High‐purity GaAs layers grown by low‐pressure metalorganic chemical vapor deposition

1989 ◽  
Vol 55 (16) ◽  
pp. 1677-1679 ◽  
Author(s):  
M. Razeghi ◽  
F. Omnes ◽  
J. Nagle ◽  
M. Defour ◽  
O. Acher ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Purity ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Metalorganic Chemical

High‐purity ZnSe obtained by metalorganic chemical vapor deposition epitaxy

1981 ◽  
Vol 52 (11) ◽  
pp. 6895-6900 ◽  
Author(s):  
P. Blanconnier ◽  
J. F. Hogrel ◽  
A. M. Jean‐Louis ◽  
B. Sermage
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Purity ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Metalorganic Chemical

High‐purity InP layer grown by metalorganic chemical vapor deposition using tertiarybutylphosphine

1991 ◽  
Vol 59 (22) ◽  
pp. 2862-2864 ◽  
Author(s):  
Toru Imori ◽  
Takayuki Ninomiya ◽  
Kouhei Ushikubo ◽  
Kazuhiro Kondoh ◽  
Kouichi Nakamura
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Purity ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Metalorganic Chemical
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