High‐power (2.2 W) cw operation of (111)‐oriented GaAs/AlGaAs single‐quantum‐well lasers prepared by molecular‐beam epitaxy

1988 ◽  
Vol 64 (5) ◽  
pp. 2764-2766 ◽  
Author(s):  
T. Hayakawa ◽  
T. Suyama ◽  
M. Kondo ◽  
M. Hosoda ◽  
S. Yamamoto ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Power ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Cw Operation

High‐power single‐mode strained single quantum well InGaAs/AlGaAs lasers grown by molecular beam epitaxy on nonplanar substrates

1990 ◽  
Vol 56 (20) ◽  
pp. 1939-1941 ◽  
Author(s):  
D. J. Arent ◽  
L. Brovelli ◽  
H. Jäckel ◽  
E. Marclay ◽  
H. P. Meier
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Power ◽  
Molecular Beam ◽  
Single Mode ◽  
Single Quantum ◽  
Single Quantum Well

High-performance 1.32-μm GaInNAs/GaAs single-quantum-well lasers grown by molecular beam epitaxy

2002 ◽  
Author(s):  
Wei Li ◽  
Chang S. Peng ◽  
Tomi Jouhti ◽  
Janne Konttinen ◽  
Emil-Mihai Pavelescu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Performance ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Single Quantum Well
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