Atomic-Scale Chemistry of Metal Surfaces

1993 ◽  
Vol 32 (Part 1, No. 3B) ◽  
pp. 1389-1393 ◽  
Author(s):  
Ken-ichi Tanaka
Keyword(s):  
Metal Surfaces ◽  
Atomic Scale

Site-selective, resonant photochemical desorption of metal atoms with laser light: manipulation of metal surfaces on the atomic scale

2003 ◽  
Vol 526 (1-2) ◽  
pp. L151-L157 ◽  
Author(s):  
D. Martin ◽  
T. Jacob ◽  
F. Stietz ◽  
B. Fricke ◽  
F. Träger
Keyword(s):  
Metal Surfaces ◽  
Laser Light ◽  
Atomic Scale ◽  
Light Manipulation ◽  
Metal Atoms ◽  
Site Selective

Atomic scale chemical fabrication of metal surfaces

1997 ◽  
Vol 386 (1-3) ◽  
pp. 56-66 ◽  
Author(s):  
Ken-ichi Tanaka ◽  
Yuji Okawa
Keyword(s):  
Metal Surfaces ◽  
Atomic Scale

scholarly journals Ab initio calculation of field emission from metal surfaces with atomic-scale defects

2019 ◽  
Vol 100 (16) ◽  
Author(s):  
H. Toijala ◽  
K. Eimre ◽  
A. Kyritsakis ◽  
V. Zadin ◽  
F. Djurabekova
Keyword(s):  
Ab Initio ◽  
Field Emission ◽  
Ab Initio Calculation ◽  
Metal Surfaces ◽  
Atomic Scale

Atomic-Scale Fabrication of Metal Surfaces by Using Adsorption and Chemical Reaction

1997 ◽  
pp. 225-261
Author(s):  
Ken-ichi Tanaka ◽  
Yuji Matsumoto ◽  
Takaya Fujita ◽  
Yuji Okawa
Keyword(s):  
Chemical Reaction ◽  
Metal Surfaces ◽  
Atomic Scale

Interband Electronic Excitation-Assisted Atomic-Scale Restructuring of Metal Surfaces by Nanosecond Pulsed Laser Light

Science ◽  
1998 ◽  
Vol 279 (5351) ◽  
pp. 679-681 ◽  
Author(s):  
Hans-Joachim Ernst ◽  
Fabrice Charra ◽  
Ludovic Douillard
Keyword(s):  
Metal Surfaces ◽  
Electronic Excitation ◽  
Laser Light ◽  
Pulsed Laser ◽  
Atomic Scale ◽  
Nanosecond Pulsed Laser

Structure and migration of planar defects in crystals observed in atomic scale

1978 ◽  
Vol 36 (1) ◽  
pp. 284-285 ◽  
Author(s):  
H. Hashimoto ◽  
Y. Sugimoto ◽  
Y. Takai ◽  
H. Endoh
Keyword(s):  
Electron Microscope ◽  
Rotation Angle ◽  
Crystal Surface ◽  
Electron Gun ◽  
Atomic Scale ◽  
Present Observation ◽  
Twist Boundary ◽  
Optical Magnification ◽  
Zinc Crystal ◽  
And Migration

As was demonstrated by the present authors that atomic structure of simple crystal can be photographed by the conventional 100 kV electron microscope adjusted at “aberration free focus (AFF)” condition. In order to operate the microscope at AFF condition effectively, highly stabilized electron beams with small energy spread and small beam divergence are necessary. In the present observation, a 120 kV electron microscope with LaB6 electron gun was used. The most of the images were taken with the direct electron optical magnification of 1.3 million times and then magnified photographically.1. Twist boundary of ZnSFig. 1 is the image of wurtzite single crystal with twist boundary grown on the surface of zinc crystal by the reaction of sulphur vapour of 1540 Torr at 500°C. Crystal surface is parallel to (00.1) plane and electron beam is incident along the axis normal to the crystal surface. In the twist boundary there is a dislocation net work between two perfect crystals with a certain rotation angle.

Resolution in the scanning tunneling microscope

1991 ◽  
Vol 49 ◽  
pp. 488-489
Author(s):  
R. J. Wilson ◽  
D. D. Chambliss ◽  
S. Chiang ◽  
V. M. Hallmark
Keyword(s):  
Scanning Tunneling Microscope ◽  
Fundamental Principle ◽  
Atomic Scale ◽  
Lateral Resolution ◽  
Scanning Tunneling ◽  
Electronic Noise ◽  
Vertical Resolution ◽  
Tunneling Microscopy ◽  
Spatial Profile ◽  
Theoretical Analyses

Scanning tunneling microscopy (STM) has been used for many atomic scale observations of metal and semiconductor surfaces. The fundamental principle of the microscope involves the tunneling of evanescent electrons through a 10Å gap between a sharp tip and a reasonably conductive sample at energies in the eV range. Lateral and vertical resolution are used to define the minimum detectable width and height of observed features. Theoretical analyses first discussed lateral resolution in idealized cases, and recent work includes more general considerations. In all cases it is concluded that lateral resolution in STM depends upon the spatial profile of electronic states of both the sample and tip at energies near the Fermi level. Vertical resolution is typically limited by mechanical and electronic noise.

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