Effect of the Gas Temperature of a High-Power Chemical Oxygen-Iodine Laser on Calculated Small Signal Gain and Output Power

1995 ◽  
Vol 34 (Part 1, No. 4A) ◽  
pp. 1867-1873
Author(s):  
Tsutomu Fukuda ◽  
Sanichiro Yoshida ◽  
Hiroshi Ohue ◽  
Takeshi Tomizawa ◽  
Tomoo Fujioka ◽  
...  
2002 ◽  
Vol 38 (5) ◽  
pp. 421-428 ◽  
Author(s):  
V.D. Nikolaev ◽  
M.V. Zagidullin ◽  
M.I. Svistun ◽  
B.T. Anderson ◽  
R.F. Tate ◽  
...  

2018 ◽  
Vol 10 (9) ◽  
pp. 999-1010 ◽  
Author(s):  
Michele Squartecchia ◽  
Tom K. Johansen ◽  
Jean-Yves Dupuy ◽  
Virginio Midili ◽  
Virginie Nodjiadjim ◽  
...  

AbstractIn this paper, we report the analysis, design, and implementation of stacked transistors for power amplifiers realized on InP Double Heterojunction Bipolar Transistors (DHBTs) technology. A theoretical analysis based on the interstage matching between all the single transistors has been developed starting from the small-signal equivalent circuit. The analysis has been extended by including large-signal effects and layout-related limitations. An evaluation of the maximum number of transistors for positive incremental power and gain is also carried out. To validate the analysis, E-band three- and four-stacked InP DHBT matched power cells have been realized for the first time as monolithic microwave integrated circuits (MMICs). For the three-stacked transistor, a small-signal gain of 8.3 dB, a saturated output power of 15 dBm, and a peak power added efficiency (PAE) of 5.2% have been obtained at 81 GHz. At the same frequency, the four-stacked transistor achieves a small-signal gain of 11.5 dB, a saturated output power of 14.9 dBm and a peak PAE of 3.8%. A four-way combined three-stacked MMIC power amplifier has been implemented as well. It exhibits a linear gain of 8.1 dB, a saturated output power higher than 18 dBm, and a PAE higher than 3% at 84 GHz.


1986 ◽  
Vol 4 (2) ◽  
pp. 167-181 ◽  
Author(s):  
Zhou Xuehua ◽  
Chen Liyin ◽  
Chen Haitao

A two-dimensional simplified model of an HF chemical laser is introduced. Using an implicit finite difference scheme, the solution of two adjacent parallel streams with diffusion mixing and chemical reaction is generated. A contour of the mixing and reaction boundary is obtained without presupposition. The distribution of the HF(u) concentrations, gas temperature and the optical small signal gain (αu, J) on the flowing plane (X, Y) are presented. Compared with the solution solved directly from a set of Navier–Stokes equations, the results of these two methods agree with each other qualitatively. The influences of the different velocity, temperature (T0) and composition of the two streams on the small signal gain after the nozzle exit are investigated. It is interesting that for larger J with a fixed u, the peaks of αu, J—T0 profiles move towards higher T0. The computing method is simple and only a short computing time is needed.


1990 ◽  
Author(s):  
Willy L. Bohn ◽  
Keith A. Truesdell ◽  
W. Pete Latham ◽  
Petras V. Avizonis

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