Polysilicon Thin-Film Transistors Processed at Low Temperature ($\bf \Leq 600^{\circ}C$) Using Solid-Phase Crystallization in Wet Oxygen Atmosphere

1996 ◽  
Vol 35 (Part 2, No. 6A) ◽  
pp. L680-L682 ◽  
Author(s):  
Hiroki Hamada ◽  
Akihumi Sasaki ◽  
Yuji Okita ◽  
Tatuhiko Niina
1990 ◽  
Vol 182 ◽  
Author(s):  
Ichio Yudasaka ◽  
Hiroyuki Ohshima

AbstractPolysilicon thin film transistors are now in mass production. Key factors of the success are thinner polysilicon film and thermal oxidation. Practical applications of polysilicon thin film transistors have been limited, however, because of high temperature processing. Alternative technologies to thermal oxidation are very low pressure deposition, solid-phase crystallization, laser-annealing and hydrogenation. These technologies are compatible with low temperature processing and will contribute to the advance of polysilicon thin film transistors in the future.


2008 ◽  
Vol 103 (4) ◽  
pp. 044508 ◽  
Author(s):  
Moojin Kim ◽  
Kyoung-Bo Kim ◽  
Ki-Yong Lee ◽  
CheolHo Yu ◽  
Hye-Dong Kim ◽  
...  

2001 ◽  
Vol 16 (11) ◽  
pp. 918-924 ◽  
Author(s):  
L Pichon ◽  
K Mourgues ◽  
F Raoult ◽  
T Mohammed-Brahim ◽  
K Kis-Sion ◽  
...  

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