Thin film transistors fabricated by in situ doped unhydrogenated polysilicon films obtained by solid phase crystallization

2001 ◽  
Vol 16 (11) ◽  
pp. 918-924 ◽  
Author(s):  
L Pichon ◽  
K Mourgues ◽  
F Raoult ◽  
T Mohammed-Brahim ◽  
K Kis-Sion ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Solid Phase ◽  
Solid Phase Crystallization ◽  
Polysilicon Films

Performance of thin film Transistors on Unhydrogenated In-Situ Doped Polysilicon films Obtained by Solid Phase Crystallization

1997 ◽  
Vol 471 ◽  
Author(s):  
K. Mourgues ◽  
F. Raoult ◽  
L. Pichon ◽  
T. Mohammed-Brahim ◽  
D. Briand ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Solid Phase ◽  
Chemical Vapor ◽  
Pressure Chemical ◽  
Polysilicon Films ◽  
The Difference

ABSTRACTLow Temperature Unhydrogenated in-situ doped polysilicon Thin Film Transistors (LTUTFT) are made through two types of four-mask aluminium gate process. Silicon layers are elaborated by a Low Pressure Chemical Vapor Deposition (LPCVD) method and crystallized by a thermal annealing. Source and drain regions are in-situ doped. An Atmospheric Pressure Chemical Vapor Deposition (APCVD) silicon dioxide ensures the gate insulation. Two structures A and B are fabricated, the difference is that for sample B the undoped/doped polysilicon layer interface is suppressed.The structure of the polysilicon films is studied using Transmission Electron Microscopy (TEM) and Current-Voltage characteristics of both types of TFTs indicate electrical quality of the polysilicon films.The best electrical properties are obtained with the B type TFTs: a low threshold voltage (VT=1.2V), a low subthreshold slope (0.7 V/dec), a high On/Off state current ratio (107) for a drain voltage VDS= 1V, and a very high field effect mobility (≥100 cm2 /Vs). It is worth to notice that these good results are obtained without hydrogenation.

Polysilicon Thin Film Transistors

1990 ◽  
Vol 182 ◽  
Author(s):  
Ichio Yudasaka ◽  
Hiroyuki Ohshima
Keyword(s):  
Thin Film ◽  
Thermal Oxidation ◽  
Thin Film Transistors ◽  
Laser Annealing ◽  
Solid Phase ◽  
Solid Phase Crystallization ◽  
Practical Applications ◽  
Polysilicon Film ◽  
Alternative Technologies ◽  
Low Temperature Processing

AbstractPolysilicon thin film transistors are now in mass production. Key factors of the success are thinner polysilicon film and thermal oxidation. Practical applications of polysilicon thin film transistors have been limited, however, because of high temperature processing. Alternative technologies to thermal oxidation are very low pressure deposition, solid-phase crystallization, laser-annealing and hydrogenation. These technologies are compatible with low temperature processing and will contribute to the advance of polysilicon thin film transistors in the future.

Effects of high pressure annealing on the characteristics of solid phase crystallization poly-Si thin-film transistors

2008 ◽  
Vol 103 (4) ◽  
pp. 044508 ◽  
Author(s):  
Moojin Kim ◽  
Kyoung-Bo Kim ◽  
Ki-Yong Lee ◽  
CheolHo Yu ◽  
Hye-Dong Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
High Pressure ◽  
Thin Film Transistors ◽  
Solid Phase ◽  
Solid Phase Crystallization ◽  
Si Thin Film
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