Fabrication of N-type and P-type Schottky Barrier Thin-Film-Transistors Crystallized by Excimer Laser Annealing and Solid Phase Crystallization Method

2008 ◽  
Author(s):  
J. W. Shin ◽  
C. J. Choi ◽  
W. J. Cho
Keyword(s):  
Thin Film ◽  
Schottky Barrier ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
Laser Annealing ◽  
Solid Phase ◽  
Excimer Laser Annealing ◽  
Solid Phase Crystallization ◽  
Crystallization Method ◽  
P Type

Polysilicon Thin Film Transistors

1990 ◽  
Vol 182 ◽  
Author(s):  
Ichio Yudasaka ◽  
Hiroyuki Ohshima
Keyword(s):  
Thin Film ◽  
Thermal Oxidation ◽  
Thin Film Transistors ◽  
Laser Annealing ◽  
Solid Phase ◽  
Solid Phase Crystallization ◽  
Practical Applications ◽  
Polysilicon Film ◽  
Alternative Technologies ◽  
Low Temperature Processing

AbstractPolysilicon thin film transistors are now in mass production. Key factors of the success are thinner polysilicon film and thermal oxidation. Practical applications of polysilicon thin film transistors have been limited, however, because of high temperature processing. Alternative technologies to thermal oxidation are very low pressure deposition, solid-phase crystallization, laser-annealing and hydrogenation. These technologies are compatible with low temperature processing and will contribute to the advance of polysilicon thin film transistors in the future.

Poly-Silicon Thin-Film Transistors with Uniform Performance Fabricated by Excimer Laser Annealing

1993 ◽  
Vol 32 (Part 1, No. 1B) ◽  
pp. 474-481 ◽  
Author(s):  
Ichirou Asai ◽  
Noriji Kato ◽  
Mario Fuse ◽  
Toshihisa Hamano
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
Laser Annealing ◽  
Silicon Thin Film ◽  
Excimer Laser Annealing ◽  
Poly Silicon
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