Analysis of The Threshold Voltage Adjustment and Floating Body Effect Suppression for0.1 µmFully Depleted SOI-MOSFET

1997 ◽  
Vol 36 (Part 1, No. 3B) ◽  
pp. 1563-1568
Author(s):  
Risho Koh ◽  
Hiroshi Matsumoto
Keyword(s):  
Threshold Voltage ◽  
Floating Body ◽  
Body Effect ◽  
Soi Mosfet ◽  
Floating Body Effect

Body Potential Design Using Narrow and Shallow Halo to Reduce the Floating Body Effect of SOI-MOSFET

2002 ◽  
Author(s):  
Risho Koh ◽  
Yukishige Saito ◽  
Hisashi Takemura ◽  
Kohichi Arai ◽  
Mitsuru Narihiro ◽  
...  
Keyword(s):  
Floating Body ◽  
Body Effect ◽  
Soi Mosfet ◽  
Floating Body Effect ◽  
Body Potential

Simulation of suppression of floating-body effect in partially depleted SOI MOSFET using a Si1−xGex dual source structure

2004 ◽  
Vol 114-115 ◽  
pp. 264-268 ◽  
Author(s):  
Ming Zhu ◽  
Peng Chen ◽  
Ricky K.Y. Fu ◽  
Weili Liu ◽  
Chenglu Lin ◽  
...  
Keyword(s):  
Floating Body ◽  
Body Effect ◽  
Soi Mosfet ◽  
Floating Body Effect ◽  
Dual Source ◽  
Source Structure

A novel double-gate SOI MOSFET to improve the floating body effect by dual SiGe trench

2016 ◽  
Vol 15 (2) ◽  
pp. 537-544 ◽  
Author(s):  
Ali A. Orouji ◽  
Atefeh Rahimifar ◽  
Mohammad Jozi
Keyword(s):  
Floating Body ◽  
Double Gate ◽  
Body Effect ◽  
Soi Mosfet ◽  
Floating Body Effect

scholarly journals Gate Oxide Thickness Influence on the Gate Induced Floating Body Effect in SOI Technology

2008 ◽  
Vol 3 (2) ◽  
pp. 91-95
Author(s):  
Paula G. D. Agopian ◽  
João Antonio Martino ◽  
Eddy Simoen ◽  
Cor Claeys
Keyword(s):  
Gate Oxide ◽  
Oxide Thickness ◽  
Silicon On Insulator ◽  
Floating Body ◽  
Electrical Measurements ◽  
Body Effect ◽  
Soi Mosfet ◽  
Floating Body Effect ◽  
Gate Oxide Thickness ◽  
Soi Technology

In this work, we explore the gate oxide thickness influence on the Gate Induced Floating Body effect (GIFBE). This study was performed through two-dimensional numerical simulations and electrical measurements. The available devices are from 130nm and 65nm Silicon-On-Insulator (SOI) MOSFET technologies. The GIFBE and threshold voltage are evaluated as function of the gate oxide thickness reduction and an overlap tendency of the first and the second transconductance peaks is observed.

Enhanced gate-induced floating-body effect in PD SOI MOSFET under external mechanical strain

2010 ◽  
Vol 205 (5) ◽  
pp. 1470-1474 ◽  
Author(s):  
Chih-Hao Dai ◽  
Ting-Chang Chang ◽  
Ann-Kuo Chu ◽  
Yuan-Jui Kuo ◽  
Shih-Ching Chen ◽  
...  
Keyword(s):  
Mechanical Strain ◽  
Floating Body ◽  
Body Effect ◽  
Soi Mosfet ◽  
Floating Body Effect
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