scholarly journals Gate Oxide Thickness Influence on the Gate Induced Floating Body Effect in SOI Technology

2008 ◽  
Vol 3 (2) ◽  
pp. 91-95
Author(s):  
Paula G. D. Agopian ◽  
João Antonio Martino ◽  
Eddy Simoen ◽  
Cor Claeys
Keyword(s):  
Gate Oxide ◽  
Oxide Thickness ◽  
Silicon On Insulator ◽  
Floating Body ◽  
Electrical Measurements ◽  
Body Effect ◽  
Soi Mosfet ◽  
Floating Body Effect ◽  
Gate Oxide Thickness ◽  
Soi Technology

In this work, we explore the gate oxide thickness influence on the Gate Induced Floating Body effect (GIFBE). This study was performed through two-dimensional numerical simulations and electrical measurements. The available devices are from 130nm and 65nm Silicon-On-Insulator (SOI) MOSFET technologies. The GIFBE and threshold voltage are evaluated as function of the gate oxide thickness reduction and an overlap tendency of the first and the second transconductance peaks is observed.

The Impact of the Gate Oxide Thickness Reduction on the Gate Induced Floating Body Effect in SOI nMOSFETs

2019 ◽  
Vol 9 (1) ◽  
pp. 305-311
Author(s):  
Paula G. Der Agopian ◽  
Joao A. Martino ◽  
E. Simoen ◽  
C. Claeys
Keyword(s):  
Gate Oxide ◽  
Oxide Thickness ◽  
Thickness Reduction ◽  
Floating Body ◽  
Body Effect ◽  
Floating Body Effect ◽  
Gate Oxide Thickness ◽  
The Impact

Modeling of Floating-Body Effect in SOI-MOSFET with Complete Surface-Potential Description

2007 ◽  
Author(s):  
Takahiro Murakami ◽  
Makoto Ando ◽  
Norio Sadachika ◽  
Mitiko Miura-Mattausch
Keyword(s):  
Surface Potential ◽  
Floating Body ◽  
Body Effect ◽  
Soi Mosfet ◽  
Potential Description ◽  
Complete Surface ◽  
Floating Body Effect

Body Potential Design Using Narrow and Shallow Halo to Reduce the Floating Body Effect of SOI-MOSFET

2002 ◽  
Author(s):  
Risho Koh ◽  
Yukishige Saito ◽  
Hisashi Takemura ◽  
Kohichi Arai ◽  
Mitsuru Narihiro ◽  
...  
Keyword(s):  
Floating Body ◽  
Body Effect ◽  
Soi Mosfet ◽  
Floating Body Effect ◽  
Body Potential

Simulation of suppression of floating-body effect in partially depleted SOI MOSFET using a Si1−xGex dual source structure

2004 ◽  
Vol 114-115 ◽  
pp. 264-268 ◽  
Author(s):  
Ming Zhu ◽  
Peng Chen ◽  
Ricky K.Y. Fu ◽  
Weili Liu ◽  
Chenglu Lin ◽  
...  
Keyword(s):  
Floating Body ◽  
Body Effect ◽  
Soi Mosfet ◽  
Floating Body Effect ◽  
Dual Source ◽  
Source Structure

Influence of Body Contact on the ESD Protection Performance in 0.35μm Partially-Depleted SOI Salicided CMOS Technology

2011 ◽  
Vol 383-390 ◽  
pp. 7025-7031
Author(s):  
Zhong Fang Wang ◽  
Cheng Min Xie ◽  
Hong Ju Yue ◽  
Long Sheng Wu ◽  
You Bao Liu
Keyword(s):  
Transmission Line ◽  
Pulse Generator ◽  
Cmos Technology ◽  
Floating Body ◽  
Body Effect ◽  
Body Contact ◽  
Floating Body Effect ◽  
Gate Structure ◽  
Esd Protection ◽  
Soi Technology

Although body contact can solve the problem of floating body effect in the partially-depleted (PD) SOI technology, it still has important influence on the ESD protection performance. In order to investigate the influence of body contact on the ESD protection performance, three different structures are fabricated in 0.35μm PD SOI salicided CMOS technology, they are stick gate structure with body floating, H gate structure with body contact located outside the edge gate, and body tied source (BTS)structure with body contact placed intermittently along the source diffusion. The transmission line pulse generator(TLPG) measured results of these three different structures are compared and analyzed, both the stick gate structure with body floating and BTS structure have a better robustness level than H gate structure with body contact.

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