Single-Electron Transistor in Silicon-on-Insulator with Schottky-Contact Tunnel Barriers

1997 ◽  
Vol 36 (Part 1, No. 6B) ◽  
pp. 4147-4150 ◽  
Author(s):  
Hironobu Fukui ◽  
Minoru Fujishima ◽  
Koichiro Hoh
Keyword(s):  
Schottky Contact ◽  
Silicon On Insulator ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Tunnel Barriers

TRANSPARENCY OF NARROW CONSTRICTIONS IN A GRAPHENE SINGLE ELECTRON TRANSISTOR

2009 ◽  
Vol 23 (12n13) ◽  
pp. 2647-2654 ◽  
Author(s):  
C. STAMPFER ◽  
E. SCHURTENBERGER ◽  
F. MOLITOR ◽  
J. GÜTTINGER ◽  
T. IHN ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Electric Fields ◽  
Drain Current ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Perpendicular Magnetic Field ◽  
Current Saturation ◽  
Tunnel Barriers ◽  
Graphene Island ◽  
Charging Energy

We report on electronic transport experiments on a graphene single electron transistor as function of a perpendicular magnetic field. The device, which consists of a graphene island connected to source and drain electrodes via two narrow graphene constrictions is electronically characterized and the device exhibits a characteristic charging energy of approx. 3.5 meV. We investigate the homogeneity of the two graphene "tunnel" barriers connecting the single electron transistor to source and drain contacts as function of laterally applied electric fields, which are also used to electrostatically tune the overall device. Further, we focus on the barrier transparency as function of an applied perpendicular magnetic field and we find an increase of transparency for increasing magnetic field and a source-drain current saturation for magnetic fields exceeding 5 T.

Enhancement of Coulomb blockade and tunability by multidot coupling in a silicon-on-insulator-based single-electron transistor

1999 ◽  
Vol 75 (4) ◽  
pp. 566-568 ◽  
Author(s):  
J. W. Park ◽  
K. S. Park ◽  
B. T. Lee ◽  
C. H. Lee ◽  
S. D. Lee ◽  
...  
Keyword(s):  
Coulomb Blockade ◽  
Silicon On Insulator ◽  
Single Electron ◽  
Single Electron Transistor

Fabrication and Characterization of Sidewall Defined Silicon-on-Insulator Single-Electron Transistor

2008 ◽  
Vol 7 (5) ◽  
pp. 544-550 ◽  
Author(s):  
Young Chai Jung ◽  
Keun Hwi Cho ◽  
Byoung Hak Hong ◽  
Seung Hun Son ◽  
Duk Soo Kim ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Fabrication And Characterization

Tunable aluminium-gated single electron transistor on a doped silicon-on-insulator etched nanowire

2012 ◽  
Vol 101 (10) ◽  
pp. 103504 ◽  
Author(s):  
M. F. Gonzalez-Zalba ◽  
D. Heiss ◽  
G. Podd ◽  
A. J. Ferguson
Keyword(s):  
Silicon On Insulator ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Doped Silicon

Spin-dependent Coulomb blockade in a silicon-on-insulator-based single-electron transistor

2000 ◽  
Vol 77 (15) ◽  
pp. 2355-2357 ◽  
Author(s):  
S. D. Lee ◽  
K. S. Park ◽  
J. W. Park ◽  
Y. M. Moon ◽  
Jung B. Choi ◽  
...  
Keyword(s):  
Coulomb Blockade ◽  
Silicon On Insulator ◽  
Single Electron ◽  
Single Electron Transistor

scholarly journals Single-electron transistor based on a silicon-on-insulator quantum wire fabricated by a side-wall patterning method

2001 ◽  
Vol 79 (23) ◽  
pp. 3812-3814 ◽  
Author(s):  
D. H. Kim ◽  
S.-K. Sung ◽  
J. S. Sim ◽  
K. R. Kim ◽  
J. D. Lee ◽  
...  
Keyword(s):  
Quantum Wire ◽  
Side Wall ◽  
Silicon On Insulator ◽  
Single Electron ◽  
Single Electron Transistor
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