Metal–oxide–semiconductor-compatible silicon based single electron transistor using bonded and etched back silicon on insulator material

1997 ◽  
Vol 15 (6) ◽  
pp. 2836 ◽  
Author(s):  
T. Köster
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Silicon On Insulator ◽  
Single Electron ◽  
Oxide Semiconductor ◽  
Single Electron Transistor ◽  
Silicon Based

Design of Quaternary Half Adder Using Hybrid SETMOS Cell

2011 ◽  
Vol 110-116 ◽  
pp. 5085-5089
Author(s):  
Khadijeh Feizi ◽  
Ali Shahhoseini
Keyword(s):  
Metal Oxide ◽  
Logic Gates ◽  
Metal Oxide Semiconductor ◽  
Single Electron ◽  
Oxide Semiconductor ◽  
Single Electron Transistor ◽  
Mos Transistor ◽  
Logic Operation ◽  
Half Adder ◽  
Arithmetic Units

Adder is one of the important arithmetic units in computers. In this paper, we investigate the implementation of quaternary half adder based on multiple-valued (MV) logic gates using single electron transistor (SET) and metal-oxide-semiconductor (MOS) transistor. We use hybrid SETMOS universal literal gate which has been proposed by Mahapatra and Ionesco. We apply two 4-radix inputs to the proposed quaternary half adder and obtain sum and carry outputs. The logic operation of the proposed quaternary half adder is verified by using HSPICE simulator. Moreover we compare the performance of our proposed quaternary half adder with the performance of a quaternary half adder based on MOS technology.

Enhancement-mode metal-oxide-semiconductor single-electron transistor on pure silicon

2006 ◽  
Vol 89 (7) ◽  
pp. 073106 ◽  
Author(s):  
G. M. Jones ◽  
B. H. Hu ◽  
C. H. Yang ◽  
M. J. Yang ◽  
Russell Hajdaj ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Single Electron ◽  
Oxide Semiconductor ◽  
Single Electron Transistor ◽  
Pure Silicon ◽  
Enhancement Mode
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