The Integration of InxGa1-xN Multiple-Quantum-Well Laser Diodes with Copper Substrates by Laser Lift-Off

2000 ◽  
Vol 39 (Part 2, No. 12A) ◽  
pp. L1203-L1205 ◽  
Author(s):  
William S. Wong ◽  
Michael Kneissl ◽  
Ping Mei ◽  
David W. Treat ◽  
Mark Teepe ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Lift Off ◽  
Multiple Quantum Well Laser

scholarly journals Performance characteristics of cw InGaN multiple-quantum-well laser diodes

2000 ◽  
Vol 639 ◽  
Author(s):  
Michael Kneissl ◽  
William S. Wong ◽  
Chris. G. Van de Walle ◽  
John E. Northrup ◽  
David W. Treat ◽  
...  
Keyword(s):  
Quantum Well ◽  
Continuous Wave ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Chemical Vapor ◽  
Performance Characteristics ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Lift Off ◽  
Multiple Quantum Well Laser

ABSTRACTThe performance characteristics are reported for continuous-wave (cw) InGaN multiple-quantum-well laser diodes grown on epitaxially laterally overgrown GaN on sapphire substrates by metalorganic chemical vapor deposition. Room-temperature cw threshold currents as low as 41mA with operating voltages of 6.0V were obtained. The emission wavelength was near 400 nm with output powers greater than 20 mW per facet. Under cw conditions laser oscillation was observed up to 90°C. A significant reduction in thermal resistance was observed for laser diodes transferred from sapphire onto Cu substrates by excimer laser lift-off, resulting in increased cw output power of more than 100mW.

CW InGaN multiple-quantum-well laser diodes on copper and diamond substrates by laser lift-off

2002 ◽  
Vol 93 (1-3) ◽  
pp. 68-72 ◽  
Author(s):  
Michael Kneissl ◽  
William S Wong ◽  
David W Treat ◽  
Mark Teepe ◽  
Naoko Miyashita ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Lift Off ◽  
Multiple Quantum Well Laser

Comparison of 1.3-µm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes with/without GaInAsP and AlGaInAs Graded-Composition Layers

2003 ◽  
Vol 42 (Part 2, No. 12B) ◽  
pp. L1507-L1508
Author(s):  
Ming-Yuan Wu ◽  
Po-Hsun Lei ◽  
Chia-Lung Tsai ◽  
Chih-Wei Hu ◽  
Meng-Chyi Wu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Multiple Quantum Well Laser

1.3-μm n-type modulation-doped AlGaInAs/AlGaInAs strain-compensated multiple-quantum-well laser diodes

2002 ◽  
Vol 49 (7) ◽  
pp. 1129-1135 ◽  
Author(s):  
Po-Hsun Lei ◽  
Chia-Chien Lin ◽  
Wen-Jeng Ho ◽  
Meng-Chyi Wu ◽  
Lih-Wen Laih
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Multiple Quantum Well Laser

Analysis of mode-hopping effect in Fabry–Pérot multiple-quantum well laser diodes via low frequency noise investigation

2013 ◽  
Vol 79 ◽  
pp. 104-110 ◽  
Author(s):  
Sandra Pralgauskaitė ◽  
Vilius Palenskis ◽  
Jonas Matukas ◽  
Bronius Šaulys ◽  
Vladimir Kornijčuk ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Low Frequency ◽  
Frequency Noise ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Fabry Perot ◽  
Mode Hopping ◽  
Multiple Quantum Well Laser
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