Fabrication and Characterization of InP Heterojunction Bipolar Transistors with Emitter Edges Parallel to [001] and [010] Crystal Orientations

1999 ◽  
Vol 38 (Part 1, No. 2B) ◽  
pp. 1200-1203 ◽  
Author(s):  
Noureddine Matine ◽  
Martin W. Dvorak ◽  
Jean-Luc Pelouard ◽  
Fabrice Pardo ◽  
Colombo R. Bolognesi
Author(s):  
John T Torvik ◽  
M. Leksono ◽  
J. I. Pankove ◽  
B. Van Zeghbroeck

We report on the fabrication and characterization of GaN/4H-SiC n-p-n heterojunction bipolar transistors (HBTs). The device structure consists of an n-SiC collector, p-SiC base, and selectively grown n-GaN emitter. The HBTs were grown using metalorganic chemical vapor deposition on SiC substrates. Selective GaN growth through a SiO2 mask was used to avoid damage that would be caused by reactive ion etching. In this report, we demonstrate common base transistor operation with a modest dc current gain of 15 at room temperature and 3 at 300°C.


2019 ◽  
Vol 41 (6) ◽  
pp. 117-127
Author(s):  
Chien-Fong Lo ◽  
C. Y. Chang ◽  
S.-H. Chen ◽  
C.-M. Chang ◽  
S.-Y. Wang ◽  
...  

2005 ◽  
Vol 26 (7) ◽  
pp. 438-440 ◽  
Author(s):  
S.G. Thomas ◽  
E.S. Johnson ◽  
C. Tracy ◽  
P. Maniar ◽  
Xiuling Li ◽  
...  

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