Fabrication and Characterization of InAlAs/InGaAsSb/InGaAs Double Heterojunction Bipolar Transistors

2011 ◽  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Double Heterojunction ◽  
Fabrication And Characterization

Fabrication and Characterization of Self-Aligned InAlAs/InGaAsSb/InGaAs Double Heterojunction Bipolar Transistors

2019 ◽  
Vol 41 (6) ◽  
pp. 117-127
Author(s):  
Chien-Fong Lo ◽  
C. Y. Chang ◽  
S.-H. Chen ◽  
C.-M. Chang ◽  
S.-Y. Wang ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Double Heterojunction ◽  
Fabrication And Characterization

Fabrication and Characterization of InP Heterojunction Bipolar Transistors with Emitter Edges Parallel to [001] and [010] Crystal Orientations

1999 ◽  
Vol 38 (Part 1, No. 2B) ◽  
pp. 1200-1203 ◽  
Author(s):  
Noureddine Matine ◽  
Martin W. Dvorak ◽  
Jean-Luc Pelouard ◽  
Fabrice Pardo ◽  
Colombo R. Bolognesi
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Crystal Orientations ◽  
Fabrication And Characterization

Correlation between Photoreflectance Spectra and Electrical Characteristics of InP/GaAsSb Double Heterojunction Bipolar Transistors

2004 ◽  
Vol 829 ◽  
Author(s):  
Hiroki Sugiyama ◽  
Yasuhiro Oda ◽  
Haruki Yokoyama ◽  
Takashi Kobayashi ◽  
Masahiro Uchida ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
High Concentration ◽  
Organic Vapor ◽  
Double Heterojunction ◽  
Metal Organic ◽  
Emitter Region ◽  
Recombination Centers ◽  
Recombination Current

ABSTRACTWe report a photoreflectance (PR) characterization of InP/GaAsSb double-heterojunction bipolar transistor (DHBT) epitaxial wafers grown by metal-organic vapor-phase epitaxy (MOVPE). The origin of the Franz-Keldysh oscillations (FKOs) in the PR spectra was identified by step etching of the samples. FKOs from the InP emitter region were observed in the wafer with low recombination forward current at the emitter-base (E/B) heterojunction. In contrast, they did not appear when recombination current was dominant. The absence of the FKOs from the emitter indicates the high concentration of the recombination centers at the E/B heterojunction. We have also measured PR spectra from InAlP/GaAsSb/InP DHBT wafers. Pronounced FKOs from InAlP emitter reflect the suppression of recombination at E/B heterojunctions.

Characterization of InP/InGaAs double-heterojunction bipolar transistors with tunnelling barriers and composite collector structures

2001 ◽  
Vol 17 (1) ◽  
pp. 87-92 ◽  
Author(s):  
Wen-Huei Chiou ◽  
Hsi-Jen Pan ◽  
Rong-Chau Liu ◽  
Chun-Yuan Chen ◽  
Chih-Kai Wang ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Double Heterojunction

scholarly journals A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C

1999 ◽  
Vol 4 (1) ◽  
Author(s):  
John T Torvik ◽  
M. Leksono ◽  
J. I. Pankove ◽  
B. Van Zeghbroeck
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Bipolar Transistors ◽  
Heterojunction Bipolar Transistor ◽  
Current Gain ◽  
Device Structure ◽  
Fabrication And Characterization ◽  
Dc Current

We report on the fabrication and characterization of GaN/4H-SiC n-p-n heterojunction bipolar transistors (HBTs). The device structure consists of an n-SiC collector, p-SiC base, and selectively grown n-GaN emitter. The HBTs were grown using metalorganic chemical vapor deposition on SiC substrates. Selective GaN growth through a SiO2 mask was used to avoid damage that would be caused by reactive ion etching. In this report, we demonstrate common base transistor operation with a modest dc current gain of 15 at room temperature and 3 at 300°C.

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