Ultraviolet InGaN and GaN Single-Quantum-Well-Structure Light-Emitting Diodes Grown on Epitaxially Laterally Overgrown GaN Substrates
1999 ◽
Vol 38
(Part 1, No. 10)
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pp. 5735-5739
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1995 ◽
Vol 34
(Part 2, No. 10B)
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pp. L1332-L1335
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2010 ◽
Vol 530
(1)
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pp. 131/[287]-136/[292]
Keyword(s):
2008 ◽
Vol 41
(22)
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pp. 225104
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Keyword(s):
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1996 ◽
Vol 67
(11)
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pp. 3795-3798
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