High-Quality GaAsxP1-x/In0.13Ga0.87P Quantum Well Structure Grown on Si Substrate with a Very Few Threading Dislocations

1999 ◽  
Vol 38 (Part 1, No. 12A) ◽  
pp. 6645-6649 ◽  
Author(s):  
Yasuhiro Fujimoto ◽  
Hiroo Yonezu ◽  
Satoshi Irino ◽  
Katsuya Samonji ◽  
Kenji Momose ◽  
...  
Keyword(s):  
Quantum Well ◽  
Threading Dislocations ◽  
Si Substrate ◽  
High Quality ◽  
Quantum Well Structure

Dislocation-free GaAsyP1−x−yNx/GaP0.98N0.02 quantum-well structure lattice- matched to a Si substrate

2001 ◽  
Vol 79 (9) ◽  
pp. 1306-1308 ◽  
Author(s):  
Yasuhiro Fujimoto ◽  
Hiroo Yonezu ◽  
Atsushi Utsumi ◽  
Kenji Momose ◽  
Yuzo Furukawa
Keyword(s):  
Quantum Well ◽  
Si Substrate ◽  
Quantum Well Structure ◽  
Lattice Matched

Metalorganic Vapor Phase Epitaxy Growth of a High-Quality GaN/InGaN Single Quantum Well Structure Using a Misoriented SiC Substrate

1997 ◽  
Vol 36 (Part 1, No. 3B) ◽  
pp. 1961-1965 ◽  
Author(s):  
Akihiko Ishibashi ◽  
Hidemi Takeishi ◽  
Nobuyuki Uemura ◽  
Masahiro Kume ◽  
Yasufumi Yabuuchi ◽  
...  
Keyword(s):  
Quantum Well ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Single Quantum ◽  
High Quality ◽  
Single Quantum Well ◽  
Quantum Well Structure

MOVPE Growth of High Quality GaN/InGaN Single Quantum Well Structure Using Misoriented SiC Substrate

1996 ◽  
Author(s):  
Akihiko ISHIBASHI ◽  
Hidemi TAKEISHI ◽  
Nobuyuki UEMURA ◽  
Masahiro KUME ◽  
Yuzaburoh BAN
Keyword(s):  
Quantum Well ◽  
Single Quantum ◽  
High Quality ◽  
Single Quantum Well ◽  
Quantum Well Structure ◽  
Movpe Growth

High-Quality GaSb/AlGaSb Quantum Well Grown on Si Substrate

2004 ◽  
Vol 44 (1) ◽  
pp. L15-L17 ◽  
Author(s):  
Kouichi Akahane ◽  
Naokatsu Yamamoto ◽  
Shin-ichiro Gozu ◽  
Naoki Ohtani
Keyword(s):  
Quantum Well ◽  
Si Substrate ◽  
High Quality

Strain in Epitaxial GaAs on Si and CaF2/Si

1987 ◽  
Vol 102 ◽  
Author(s):  
L. J. Schowalter ◽  
Shin Hashimoto ◽  
G. A. Smith ◽  
W. M. Gibson ◽  
N. Lewis ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Gaas Layer ◽  
Buffer Layers ◽  
Threading Dislocations ◽  
Si Substrate ◽  
High Quality ◽  
Strain Measurements ◽  
Epitaxial Gaas ◽  
Ion Channeling ◽  
Gaas On Si

ABSTRACTIn this paper, ion channeling techniques are used to show that epitaxial GaAs layers grown on vicinal Si(001) wafers do not have their [001] axis precisely aligned with that of the Si substrate. Instead, the [001] axis of the GaAs layer is found to be tilted toward the surface normal of the Si substrate. This tilt was found to be ∼0.2° on vicinal Si(001) substrates which have their [001] axis tilted 4° toward the [110] azimuth. It is speculated that this misalignment is reponsible for the residual density of threading dislocations in the GaAs on Si layer. An approach described here, which can be used to avoid strain in the GaAs layer, is to grow a CaF2 buffer layer between the Si substrate and the epitaxial GaAs layer. High quality epitaxial GaAs layers have been obtained on both CaF 2 /Si(001) and CaF 2 /Si(111) substrates. Strain measurements of the epitaxial GaAs on the CaF 2 buffer layers indicate that these layers have strains below our detection limits.

Improvement of the Lifetime of a GaAs-Based Laser on Si with a Strained Quantum-Well Structure.

1994 ◽  
Vol 22 (12) ◽  
pp. 977-984
Author(s):  
Yoshiaki HASEGAWA ◽  
Takashi EGAWA ◽  
Takashi JIMBO ◽  
Masayoshi UMENO
Keyword(s):  
Quantum Well ◽  
Quantum Well Structure ◽  
Strained Quantum Well

Modulation-doped (AlGa)As/GaAs quantum well structure with high electron sheet density

1989 ◽  
Vol 25 (17) ◽  
pp. 1147
Author(s):  
A.L. Powell ◽  
J.S. Roberts ◽  
P.I. Rockett ◽  
T.J. Foster ◽  
L. Eaves
Keyword(s):  
Quantum Well ◽  
High Electron ◽  
Quantum Well Structure ◽  
Electron Sheet ◽  
Sheet Density

A GeSi-buffer structure for growth of high-quality GaAs epitaxial layers on a Si substrate

2005 ◽  
Vol 34 (1) ◽  
pp. 23-26 ◽  
Author(s):  
Edward Y. Chang ◽  
Tsung-Hsi Yang ◽  
Guangli Luo ◽  
Chun-Yen Chang
Keyword(s):  
Epitaxial Layers ◽  
Si Substrate ◽  
High Quality ◽  
Buffer Structure
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