High Resolution Transmission Electron Microscopy Study on the Structure of Ge Nanoparticles by Using an Ultrahigh Vacuum-Molecular Beam Epitaxy-Transmission Electron Microscope System

Electron Microscope ◽

High Resolution ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Microscopy Study ◽

Transmission electron microscopy study of GaInNAs(Sb) thin films grown by atomic hydrogen-assisted molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.3660232 ◽

2011 ◽

Vol 99 (19) ◽

pp. 191907 ◽

Cited By ~ 11

Author(s):

R. Oshima ◽

J. Y. Huang ◽

N. Miyashita ◽

K. Matsubara ◽

Y. Okada ◽

...

Keyword(s):

Electron Microscopy ◽

Thin Films ◽

Molecular Beam Epitaxy ◽

Atomic Hydrogen ◽

Molecular Beam ◽

Microscopy Study ◽

Transmission electron microscopy study on GaAs grown by molecular beam epitaxy at low substrate temperature

Journal of Materials Science Letters ◽

10.1007/bf00740851 ◽

1992 ◽

Vol 11 (23) ◽

pp. 1617-1619 ◽

Cited By ~ 1

Author(s):

H. Chen ◽

F. H. Li ◽

J. M. Zhou ◽

C. Jiang ◽

X. B. Mei ◽

...

Keyword(s):

Electron Microscopy ◽

Molecular Beam Epitaxy ◽

Substrate Temperature ◽

Molecular Beam ◽

Microscopy Study ◽

Transmission electron microscopy study of heavily delta‐doped GaAs grown by molecular beam epitaxy

Journal of Applied Physics ◽

10.1063/1.353370 ◽

1993 ◽

Vol 73 (2) ◽

pp. 608-614 ◽

Cited By ~ 7

Author(s):

D. G. Liu ◽

J. C. Fan ◽

C. P. Lee ◽

K. H. Chang ◽

D. C. Liou

Keyword(s):

Electron Microscopy ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Microscopy Study ◽

Microstructural characteristics of AlN thin layers grown on Si(110) substrates by molecular beam epitaxy: Transmission electron microscopy study

Thin Solid Films ◽

10.1016/j.tsf.2015.01.008 ◽

2015 ◽

Vol 576 ◽

pp. 61-67 ◽

Cited By ~ 11

Author(s):

Y.H. Kim ◽

J.H. Lee ◽

Y.K. Noh ◽

J.E. Oh ◽

S.J. Ahn

Keyword(s):

Electron Microscopy ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Microscopy Study ◽

Thin Layers ◽

Microstructural Characteristics ◽

Transmission electron microscopy study of defects in Sn-doped GaAs films grown by molecular beam epitaxy

Applied Physics A Solids and Surface ◽

10.1007/bf00626415 ◽

1987 ◽

Vol 44 (2) ◽

pp. 143-151

Author(s):

S. H. Chen ◽

C. B. Carter ◽

P. Enquist

Keyword(s):

Electron Microscopy ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Microscopy Study ◽

Transmission Electron ◽

Gaas Films

Er doping of Si and Si0.88Ge0.12 using Er2O3 and ErF3 evaporation during molecular beam epitaxy A transmission electron microscopy study

Journal of Crystal Growth ◽

10.1016/s0022-0248(98)00880-x ◽

1999 ◽

Vol 196 (1) ◽

pp. 97-110

Author(s):

K.B. Joelsson ◽

L. Hultman ◽

W.-X. Ni ◽

J. Cardenas ◽

B.G. Svensson ◽

...

Keyword(s):

Electron Microscopy ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Microscopy Study ◽

Er Doping ◽

Raman and transmission electron microscopy study of disordered silicon grown by molecular beam epitaxy

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.1676345 ◽

2004 ◽

Vol 22 (3) ◽

pp. 943 ◽

Cited By ~ 21

Author(s):

L. Tay ◽

D. J. Lockwood ◽

J.-M. Baribeau ◽

X. Wu ◽

G. I. Sproule

Keyword(s):

Electron Microscopy ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Microscopy Study ◽

Transmission electron microscopy study of CdTe(111) grown on GaAs(100) by molecular‐beam epitaxy

Journal of Applied Physics ◽

10.1063/1.344971 ◽

1990 ◽

Vol 67 (9) ◽

pp. 4114-4117 ◽

Cited By ~ 3

Author(s):

J. L. Reno ◽

M. J. Carr ◽

P. L. Gourley

Keyword(s):

Electron Microscopy ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Microscopy Study ◽

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

Transmission electron microscopy study of In0.25Ga0.75As epilayers grown on GaAs (001) by molecular beam epitaxy: The effect of epilayer thickness

10.1116/1.588214 ◽

1995 ◽

Vol 13 (3) ◽

pp. 967 ◽

Cited By ~ 5

Author(s):

S. P. Edirisinghe

Keyword(s):

Electron Microscopy ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Microscopy Study ◽

Microstructural characteristics of GaN/AlN thin films grown on a Si (110) substrate by molecular beam epitaxy: Transmission electron microscopy study

Microscopy and Microanalysis ◽

10.1017/s1431927616008722 ◽

2016 ◽

Vol 22 (S3) ◽

pp. 1576-1577

Author(s):

Y.H. Kim ◽

J.H. Lee ◽

S.J. Ahn ◽

Y.K. Noh ◽

M.D. Kim ◽

...

Keyword(s):

Electron Microscopy ◽

Thin Films ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Microscopy Study ◽

Microstructural Characteristics ◽