Electrical Properties of Nanometer-Sized Schottky Contacts for Gate Control of III–V Single Electron Devices and Quantum Devices

2001 ◽  
Vol 40 (Part 1, No. 3B) ◽  
pp. 2021-2025 ◽  
Author(s):  
Taketomo Sato ◽  
Seiya Kasai ◽  
Hideki Hasegawa
Keyword(s):  
Electrical Properties ◽  
Schottky Contacts ◽  
Single Electron ◽  
Quantum Devices ◽  
Gate Control ◽  
Single Electron Devices ◽  
Electron Devices

COMBINATORIAL APPROACHES FOR FUNCTIONAL NANOSTRUCTURE FABRICATION

2002 ◽  
Vol 01 (02) ◽  
pp. 171-185 ◽  
Author(s):  
NING GU ◽  
LAN HUANG
Keyword(s):  
Computer Simulation ◽  
Electrical Properties ◽  
Science And Technology ◽  
Single Electron ◽  
Nanostructure Fabrication ◽  
Functional Nanostructures ◽  
Single Electron Devices ◽  
Electron Devices ◽  
Nanoscale Science ◽  
Microfabrication Techniques

With the development of microfabrication techniques and nanoscale science and technology, functional nanostructures and nanodevices have been the hot-points concerned by all scientific and technological circles. This paper presents a series of our efforts on making functional nanostructures for fabrication of nanodevices, especially for prototype single electron devices (SEDs). A necessary computer simulation for explaining the electrical properties of this prototype SED is also included.

Single-electron devices with granulated film cotunneling suppressors

2006 ◽  
Author(s):  
Alexei Orlov ◽  
Xiangning Luo ◽  
Thomas Kosel ◽  
Gregory Snider
Keyword(s):  
Single Electron ◽  
Single Electron Devices ◽  
Electron Devices

Silicon single-electron devices

1999 ◽  
Vol 86 (5) ◽  
pp. 605-639 ◽  
Author(s):  
YASUO TAKAHASHI ◽  
AKIRA FUJIWARA ◽  
MASAO NAGASE ◽  
HIDEO NAMATSU ◽  
KENJI KURIHARA ◽  
...  
Keyword(s):  
Single Electron ◽  
Single Electron Devices ◽  
Electron Devices

Single-electron devices via controlled assembly of designed nanoparticles

1999 ◽  
Vol 47 (1-4) ◽  
pp. 179-183 ◽  
Author(s):  
Tobias Junno ◽  
Martin H. Magnusson ◽  
Sven-Bertil Carlsson ◽  
Knut Deppert ◽  
Jan-Olle Malm ◽  
...  
Keyword(s):  
Single Electron ◽  
Controlled Assembly ◽  
Single Electron Devices ◽  
Electron Devices

scholarly journals Single-electron devices with a mechanical degree of freedom

2012 ◽  
Vol 400 (5) ◽  
pp. 052028
Author(s):  
Yu A Pashkin ◽  
J P Pekola ◽  
D A Knyazev ◽  
T F Li ◽  
S Kafanov ◽  
...  
Keyword(s):  
Degree Of Freedom ◽  
Single Electron ◽  
Single Electron Devices ◽  
Electron Devices

SINGLE ELECTRON DEVICES

1998 ◽  
Vol 09 (01) ◽  
pp. 165-207 ◽  
Author(s):  
DORAN D. SMITH
Keyword(s):  
Tunnel Junctions ◽  
Electron Flow ◽  
Superconducting Devices ◽  
Time Correlation ◽  
Single Electron ◽  
Net Charge ◽  
Flow Through ◽  
Single Electron Devices ◽  
Electron Devices ◽  
Electron Effects

In the mid 1980s Averin and Likharev predicted that with the use of ultrasmall tunnel junctions a time correlation of electron flow through a junction could be observed, and permit the measurement of the effect of a net charge of less than one electron on the junction. Both effects were soon experimentally verified, and since that time there has been an explosion of work in the filed of single electron devices. This chapter reviews the fundamental concepts behind the operation of such devices. it then describes some of the single electron effects studied in semiconductors. Superconducting devices are then constrasted to the semiconductor and the normal metal single electron devices. The details of some current applications are described, and a thumbnail sketch of current fabrication methods is given.

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