Comprehensive Study on Reliability of Low-Temperature Poly-Si Thin-Film Transistors under Dynamic Complimentary Metal-Oxide Semiconductor Operations

2002 ◽  
Vol 41 (Part 1, No. 4B) ◽  
pp. 2414-2418 ◽  
Author(s):  
Yukiharu Uraoka ◽  
Hiroshi Yano ◽  
Tomoaki Hatayama ◽  
Takashi Fuyuki
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Si Thin Film ◽  
Comprehensive Study

High-Performance Thin-Film Transistors Enable By Metal Oxide Semiconductor with Polyaniline Doing in the Channel Layer

2020 ◽  
Vol MA2020-02 (28) ◽  
pp. 1955-1955
Author(s):  
Eun Goo Lee ◽  
Jaehak Lee ◽  
Sung-Eun Lee ◽  
Hyun-Jae Na ◽  
Kyungho Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Channel Layer

scholarly journals Rapid and facile method to prepare oxide precursor solution by using sonochemistry technology for WZTO thin film transistors

RSC Advances ◽  
2020 ◽  
Vol 10 (47) ◽  
pp. 28186-28192 ◽  
Author(s):  
Yanyu Yuan ◽  
Cong Peng ◽  
Shibo Yang ◽  
Meng Xu ◽  
Jiayu Feng ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
Precursor Solution ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Oxide Precursor

In this paper, a rapid and facile method of preparing metal-oxide semiconductor precursor solution using sonochemistry technology is proposed.

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