VLSI and Post-CMOS Electronics. Volume 1: Design, modelling and simulation
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Published By Institution Of Engineering And Technology

9781839530517, 9781839530524

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Theory and modelling of spin-transfer-torque based electronic devices

VLSI and Post-CMOS Electronics. Volume 1: Design, modelling and simulation ◽

10.1049/pbcs073f_ch9 ◽

2019 ◽

pp. 211-232

Keyword(s):

Electronic Devices ◽

Spin Transfer Torque ◽

Spin Transfer

Tunneling field effect transistors for energy efficient digital, RF and power management circuit designs enabling IoT edge computing platforms

VLSI and Post-CMOS Electronics. Volume 1: Design, modelling and simulation ◽

10.1049/pbcs073f_ch11 ◽

2019 ◽

pp. 263-285

Keyword(s):

Power Management ◽

Energy Efficient ◽

Field Effect ◽

Field Effect Transistors ◽

Edge Computing ◽

Digital Rf ◽

Tunneling Field Effect Transistors ◽

Computing Platforms

Spintronics memory and logic: an efficient alternative to CMOS technology

VLSI and Post-CMOS Electronics. Volume 1: Design, modelling and simulation ◽

10.1049/pbcs073f_ch10 ◽

2019 ◽

pp. 233-262

Keyword(s):

Cmos Technology ◽

Efficient Alternative

Emerging devices beyond CMOS: fundamentals, promises and challenges

VLSI and Post-CMOS Electronics. Volume 1: Design, modelling and simulation ◽

10.1049/pbcs073f_ch7 ◽

2019 ◽

pp. 161-186

Keyword(s):

Beyond Cmos

High performing metal–oxide semiconductor thin-film transistors

VLSI and Post-CMOS Electronics. Volume 1: Design, modelling and simulation ◽

10.1049/pbcs073f_ch12 ◽

2019 ◽

pp. 287-311

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Thin Film Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Performing ◽

Semiconductor Thin Film

Back Matter

VLSI and Post-CMOS Electronics. Volume 1: Design, modelling and simulation ◽

10.1049/pbcs073f_bm ◽

2019 ◽

Composite PFD based low-power, low noise, fast lock-in PLL

VLSI and Post-CMOS Electronics. Volume 1: Design, modelling and simulation ◽

10.1049/pbcs073f_ch6 ◽

2019 ◽

pp. 135-157

Keyword(s):

Low Power ◽

Low Noise ◽

Lock In

Design and analysis of memristor-based DRAM cell for low-power application

VLSI and Post-CMOS Electronics. Volume 1: Design, modelling and simulation ◽

10.1049/pbcs073f_ch4 ◽

2019 ◽

pp. 89-111

Keyword(s):

Low Power ◽

Power Application

Two-dimensional material-based field-effect transistors for post-silicon electronics

VLSI and Post-CMOS Electronics. Volume 1: Design, modelling and simulation ◽

10.1049/pbcs073f_ch8 ◽

2019 ◽

pp. 187-209

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Two Dimensional ◽

Silicon Electronics

CNTFETs: modelling and circuit design

VLSI and Post-CMOS Electronics. Volume 1: Design, modelling and simulation ◽

10.1049/pbcs073f_ch13 ◽

2019 ◽

pp. 313-331

Keyword(s):

Circuit Design

VLSI and Post-CMOS Electronics. Volume 1: Design, modelling and simulationLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By Institution Of Engineering And Technology

Theory and modelling of spin-transfer-torque based electronic devices

Tunneling field effect transistors for energy efficient digital, RF and power management circuit designs enabling IoT edge computing platforms

Spintronics memory and logic: an efficient alternative to CMOS technology

Emerging devices beyond CMOS: fundamentals, promises and challenges

High performing metal–oxide semiconductor thin-film transistors

Back Matter

Composite PFD based low-power, low noise, fast lock-in PLL

Design and analysis of memristor-based DRAM cell for low-power application

Two-dimensional material-based field-effect transistors for post-silicon electronics

CNTFETs: modelling and circuit design

VLSI and Post-CMOS Electronics. Volume 1: Design, modelling and simulation
Latest Publications