Large-area (64 × 64 array) inkjet-printed high-performance metal oxide bilayer heterojunction thin film transistors and n-metal-oxide-semiconductor (NMOS) inverters

2021 ◽  
Author(s):  
Shuangshuang Shao ◽  
Kun Liang ◽  
Xinxing Li ◽  
Jinfeng Zhang ◽  
Chuan Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Large Area

High-Performance Thin-Film Transistors Enable By Metal Oxide Semiconductor with Polyaniline Doing in the Channel Layer

2020 ◽  
Vol MA2020-02 (28) ◽  
pp. 1955-1955
Author(s):  
Eun Goo Lee ◽  
Jaehak Lee ◽  
Sung-Eun Lee ◽  
Hyun-Jae Na ◽  
Kyungho Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Channel Layer

scholarly journals Rapid and facile method to prepare oxide precursor solution by using sonochemistry technology for WZTO thin film transistors

RSC Advances ◽  
2020 ◽  
Vol 10 (47) ◽  
pp. 28186-28192 ◽  
Author(s):  
Yanyu Yuan ◽  
Cong Peng ◽  
Shibo Yang ◽  
Meng Xu ◽  
Jiayu Feng ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
Precursor Solution ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Oxide Precursor

In this paper, a rapid and facile method of preparing metal-oxide semiconductor precursor solution using sonochemistry technology is proposed.

Electrical behavior of p-type PbS-based metal-oxide-semiconductor thin film transistors

2010 ◽  
Vol 519 (1) ◽  
pp. 512-516 ◽  
Author(s):  
I.E. Morales-Fernández ◽  
M.I. Medina-Montes ◽  
L.A. González ◽  
B. Gnade ◽  
M.A. Quevedo-López ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Electrical Behavior ◽  
Semiconductor Thin Film ◽  
P Type
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