Effect of High-Pressure Oxygen Annealing on Bi2SiO5-Added Ferroelectric Thin Films

2002 ◽  
Vol 41 (Part 2, No. 10B) ◽  
pp. L1164-L1166 ◽  
Author(s):  
Takeshi Kijima ◽  
Yoshihito Kawashima ◽  
Yasushi Idemoto ◽  
Hiroshi Ishiwara
Keyword(s):  
Thin Films ◽  
High Pressure ◽  
Ferroelectric Thin Films ◽  
Oxygen Annealing ◽  
Pressure Oxygen ◽  
High Pressure Oxygen

Reducing dielectric loss in CaCu3Ti4O12 thin films by high-pressure oxygen annealing

2015 ◽  
Vol 3 (14) ◽  
pp. 3438-3444 ◽  
Author(s):  
Y. Lin ◽  
D. Y. Feng ◽  
M. Gao ◽  
Y. D. Ji ◽  
L. B. Jin ◽  
...  
Keyword(s):  
Thin Films ◽  
High Pressure ◽  
Dielectric Loss ◽  
Oxygen Annealing ◽  
Pressure Oxygen ◽  
High Pressure Oxygen ◽  
Strain Status

High pressure oxygen annealing could reduce the dielectric loss in CCTO films as well as induce obvious difference in strain status.

Effects of high pressure oxygen annealing on Hf0.5Zr0.5O2 ferroelectric device

2021 ◽  
Author(s):  
Hyungwoo Kim ◽  
Alireza Kashir ◽  
Seungyeol Oh ◽  
Hojung Jang ◽  
Hyunsang Hwang
Keyword(s):  
High Pressure ◽  
Oxygen Annealing ◽  
Pressure Oxygen ◽  
High Pressure Oxygen

scholarly journals Critical current densities of high pressure oxygen sputtered thin films of YBa2Cu3O7−x by non-resonant rf absorption method

Pramana ◽  
1993 ◽  
Vol 40 (2) ◽  
pp. 119-122 ◽  
Author(s):  
V V Srinivasu ◽  
S V Bhat ◽  
G K Muralidhar ◽  
G Mohan Rao ◽  
S Mohan
Keyword(s):  
Thin Films ◽  
High Pressure ◽  
Critical Current ◽  
Absorption Method ◽  
Pressure Oxygen ◽  
High Pressure Oxygen ◽  
Current Densities

Improved magnetic trapped field in thin-wall YBCO single-domain samples by high-pressure oxygen annealing

2008 ◽  
Vol 151 (1) ◽  
pp. 53-59 ◽  
Author(s):  
Xavier Chaud ◽  
Tatiana Prikhna ◽  
Yaroslav Savchuk ◽  
Anne Joulain ◽  
Evert Haanappel ◽  
...  
Keyword(s):  
High Pressure ◽  
Single Domain ◽  
Thin Wall ◽  
Oxygen Annealing ◽  
Trapped Field ◽  
Pressure Oxygen ◽  
High Pressure Oxygen
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