Light-Intensity Dependence of Photocreated Defects in Hydrogenated Amorphous Silicon-Nitrogen Alloy Films

2003 ◽  
Vol 42 (Part 2, No. 3A) ◽  
pp. L255-L256 ◽  
Author(s):  
Minoru Kumeda ◽  
Masaki Shimada ◽  
Susumu Kimura ◽  
Akiharu Morimoto ◽  
Tatsuo Shimizu
1991 ◽  
Vol 63 (5) ◽  
pp. 1015-1030 ◽  
Author(s):  
Y. Almeriouh ◽  
J. Bullot ◽  
P. Cordier ◽  
M. Gauthier ◽  
G. Mawawa

1997 ◽  
Vol 467 ◽  
Author(s):  
Y. Toyoshima ◽  
G. Ganguly ◽  
T. Ikeda ◽  
K. Saitoh ◽  
M. Kondo ◽  
...  

ABSTRACTThe bonded hydrogen on the growing surface of hydrogenated amorphous silicon germanium (a-SiGe:H) alloy films has been investigated by use of infrared reflection absorption spectroscopy (IR-RAS). When the alloy films are Si-rich, the surface hydrogen bonded to Si atoms is found to behave in a similar way to those on the hydrogenated amorphous silicon (a-Si:H) films. This means that the thermal desorption stability of surface Si hydride species is not significantly affected by the coexistence of a small amount (typically 20 at.%) of Ge. On the contrary, the desorption behavior of surface hydrogen depends on the alloy composition when the a-SiGe:H films are Ge-rich. A surface reaction scheme is provided in an attempt to explain this series of behavior in surface hydrogen on the a-SiGe:H films.


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