Exciton Binding Energy under Electric Field in ZnTe1-xSx/ZnS Strained-Layer Superlattices

2006 ◽  
Vol 45 (7) ◽  
pp. 5832-5835
Author(s):  
Chikara Onodera ◽  
Tadayoshi Shoji ◽  
Yukio Hiratate ◽  
Tsunemasa Taguchi
Keyword(s):  
Binding Energy ◽  
Electric Field ◽  
Exciton Binding Energy ◽  
Strained Layer ◽  
Strained Layer Superlattices

Effects of electric field on ZnSe/ZnS strained-layer superlattices

1990 ◽  
Vol 101 (1-4) ◽  
pp. 550-553 ◽  
Author(s):  
Toshiya Yokogawa ◽  
Tohru Saitoh ◽  
Tadashi Narusawa
Keyword(s):  
Electric Field ◽  
Strained Layer ◽  
Strained Layer Superlattices

Perpendicular-electric-field dependence of exciton binding energy studied by continuous-wave photoluminescence

1996 ◽  
Vol 53 (24) ◽  
pp. 16453-16457
Author(s):  
Kejian Luo ◽  
Houzhi Zheng ◽  
Shijie Xu ◽  
Xiaoping Yang ◽  
Penghua Zhang ◽  
...  
Keyword(s):  
Binding Energy ◽  
Electric Field ◽  
Field Dependence ◽  
Continuous Wave ◽  
Exciton Binding Energy ◽  
Electric Field Dependence

Direct observation for the reduction of exciton binding energy induced by perpendicular electric field

1995 ◽  
Vol 67 (18) ◽  
pp. 2642-2644 ◽  
Author(s):  
Kejian Luo ◽  
Houzhi Zheng ◽  
Shijie Xu ◽  
Penghua Zhang ◽  
Wei Zhang ◽  
...  
Keyword(s):  
Binding Energy ◽  
Electric Field ◽  
Direct Observation ◽  
Exciton Binding Energy

Electric Field Induced Ionization of the Exciton in Poly(Phenylene Vinylene)

2000 ◽  
Vol 660 ◽  
Author(s):  
Jian Wang ◽  
Daniel Moses ◽  
Alan J. Heeger ◽  
N. Kirova ◽  
S. Brazovski
Keyword(s):  
Binding Energy ◽  
Electric Field ◽  
Defect Density ◽  
Band Gap Energy ◽  
Light Polarization ◽  
Exciton Binding Energy ◽  
Band Edge ◽  
Phenylene Vinylene ◽  
Spectral Signature ◽  
Exciton Peak

ABSTRACTThe exciton binding energy (Eb) and the band gap energy (Eg) of poly(phenylene vinylene), PPV, have been determined by photoconductivity excitation profile spectroscopy as a function of light polarization, applied electric field, and temperature. The spectral signature of the exciton is a narrow peak (100 meV full width at half maximum) that emerges just below the band edge upon increasing the external field, the temperature or the defect density. The exciton peak is observed only for light polarized parallel to the chain axis. The exciton binding energy is obtained from the energy of the exciton peak with respect to the band edge and, independently from analysis of the field dependence of the exciton dissociation. It is Eb ≈ 60 meV.

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