New Phase Modulators for Next-Generation Low-Temperature Crystallization Method of Si Films

AbstractIt is known that the direct contact between Al and a-Si enhances the crystallization of a-Si film. But the poly-Si films crystallized by the direct contact of Al metal film suffer the problems of rough surface and pores. In our study, we utilized the vapor from AlCl3 instead of Al metal film. The crystallization was enhanced by annealing a-Si films with AlCl3 that the crystallization was completed in 5h at 540. And the surface was as smooth as that of the a-Si film. The Al incorporation into the poly-Si film took place, but the content was below the detection limit of AES.

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A Study of Cu Metal Deposition on Amorphous Si Films from Cu Solutions for Low‐Temperature Crystallization of Amorphous Si Films

Journal of The Electrochemical Society ◽

10.1149/1.1838053 ◽

1997 ◽

Vol 144 (10) ◽

pp. 3592-3596 ◽

Cited By ~ 16

Author(s):

Dong Kyun Sohn ◽

Sung Chan Park ◽

Sang Won Kang ◽

Byung Tae Ahn

Keyword(s):

Low Temperature ◽

Metal Deposition ◽

Low Temperature Crystallization ◽

Amorphous Si ◽

Si Films ◽

Temperature Crystallization

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Study of low-temperature crystallization of amorphous Si films obtained using ferritin with Ni nanoparticles

Applied Physics Letters ◽

10.1063/1.1954872 ◽

2005 ◽

Vol 86 (26) ◽

pp. 262106 ◽

Cited By ~ 65

Author(s):

Hiroya Kirimura ◽

Yukiharu Uraoka ◽

Takashi Fuyuki ◽

Mitsuhiro Okuda ◽

Ichiro Yamashita

Keyword(s):

Low Temperature ◽

Ni Nanoparticles ◽

Low Temperature Crystallization ◽

Amorphous Si ◽

Si Films ◽

Temperature Crystallization

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Effect of Ni and Al on the Low-Temperature Field Aided Lateral Crystallization (FALC)

MRS Proceedings ◽

10.1557/proc-508-161 ◽

1998 ◽

Vol 508 ◽

Author(s):

Sang-Hyun Park ◽

Seung-Ik Jun ◽

Chan-Jae Lee ◽

Yong-Ho Yang ◽

Duck-Kyun Choi

Keyword(s):

Low Temperature ◽

Electric Field ◽

Crystallization Temperature ◽

Metal Induced Crystallization ◽

Crystallization Method ◽

Free Region ◽

Lateral Crystal ◽

Lateral Crystallization ◽

Si Films ◽

Temperature Crystallization

AbstractThere have been many reports on the low temperature crystallization of amorphous silicon films by introducing a trace amount of metal impurity for low temperature poly-Si TFTs applications. MIC (Metal Induced Crystallization) uses various metals, to lower crystallization temperature. In this study, a new crystallization method called FALC (Field Aided Lateral Crystallization) in which an electric field is applied during the crystallization was explored. Among possible alloying elements with Si, Ni and Al were selected to compare the effects of these impurities on the FALC.A trace of Ni lowered the crystallization temperature of a-Si down to 5001C and induced lateral crystal growth along the electric field into the metal free region. But Al exhibited no such effect. A new crystallization method, FALC, showed considerably enhanced speed of lateral crystallization and a strong preferred orientation in crystallized Si-films.

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Low Temperature (~300°C) Epitaxial Growth of SiGe by Liquid-Solid Coexisting Annealing of A-GeSn/Si(100) Structure

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.481.137 ◽

2013 ◽

Vol 481 ◽

pp. 137-140

Author(s):

Hironori Chikita ◽

Ryo Matsumura ◽

T. Sadoh ◽

M. Miyao

Keyword(s):

Low Temperature ◽

Integrated Circuits ◽

Epitaxial Growth ◽

Annealing Time ◽

Large Scale ◽

Annealing Temperature ◽

Next Generation ◽

Low Temperature Crystallization ◽

Temperature Crystallization

To develop a new low-temperature crystallization technique, annealing characteristics of a-GeSn/Si (100) structures are investigated. It is revealed that epitaxial growth accompanying Si-Ge mixing is generated at temperatures in the liquid-solid coexisting region of the Ge-Sn system. The annealing temperature necessary for epitaxial growth is significantly decreased by increasing annealing time and/or Sn concentration. Consequently, epitaxial growth at 300°C becomes possible. These findings are expected to be useful to realize next-generation large-scale integrated circuits, where various multi-functional devices are integrated.

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