Improvement of Channel Mobility in Inversion-Type n-Channel GaN Metal–Oxide–Semiconductor Field-Effect Transistor by High-Temperature Annealing
2008 ◽
Vol 47
(10)
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pp. 7784-7787
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1996 ◽
Vol 35
(Part 1, No. 6A)
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pp. 3331-3333
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2001 ◽
Vol 40
(Part 2, No. 11B)
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pp. L1201-L1203
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2001 ◽
Vol 40
(Part 1, No. 1)
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pp. 116-117
2010 ◽
Vol 11
(4)
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pp. 178-181
2021 ◽
Vol 134
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pp. 106046