GaN metal-oxide-semiconductor field-effect transistor inversion channel mobility modeling

Journal of Applied Physics ◽

10.1063/1.3140614 ◽

2009 ◽

Vol 105 (11) ◽

pp. 114510 ◽

Author(s):

A. Pérez-Tomás ◽

M. Placidi ◽

X. Perpiñà ◽

A. Constant ◽

P. Godignon ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Mobility Modeling ◽

Channel Mobility ◽

Inversion Channel ◽

Effect Transistor

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Effects of Pyrogenic Reoxidation Annealing on Inversion Channel Mobility of 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistor Fabricated on $(11\bar{2}0)$ Face

Japanese Journal of Applied Physics ◽

10.1143/jjap.40.l1201 ◽

2001 ◽

Vol 40 (Part 2, No. 11B) ◽

pp. L1201-L1203 ◽

Author(s):

Junji Senzaki ◽

Kazutoshi Kojima ◽

Shinsuke Harada ◽

Ryoji Kosugi ◽

Seiji Suzuki ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Channel Mobility ◽

Inversion Channel ◽

Effect Transistor

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Effects of Channel Mobility on SiC Power Metal-Oxide-Semiconductor Field Effect Transistor Performance

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.3331 ◽

1996 ◽

Vol 35 (Part 1, No. 6A) ◽

pp. 3331-3333 ◽

Author(s):

Sota Kobayashi ◽

Tsunenobu Kimoto ◽

Hiroyuki Matsunami

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Channel Mobility ◽

Effect Transistor

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High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕Ga2O3(Gd2O3) as gate dielectrics

Applied Physics Letters ◽

10.1063/1.2956393 ◽

2008 ◽

Vol 93 (3) ◽

pp. 033516 ◽

Author(s):

T. D. Lin ◽

H. C. Chiu ◽

P. Chang ◽

L. T. Tung ◽

C. P. Chen ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Gate Dielectrics ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel ◽

Effect Transistor

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Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2O3 as gate dielectric

Applied Physics Letters ◽

10.1063/1.2969282 ◽

2008 ◽

Vol 93 (5) ◽

pp. 053504 ◽

Author(s):

Y. C. Chang ◽

W. H. Chang ◽

H. C. Chiu ◽

L. T. Tung ◽

C. H. Lee ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel ◽

Effect Transistor

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Self-aligned inversion-channel In0.2Ga0.8As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al2O3/Ga2O3(Gd2O3) as the gate dielectric

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3565057 ◽

2011 ◽

Vol 29 (3) ◽

pp. 03C122 ◽

Author(s):

W. H. Chang ◽

T. H. Chiang ◽

Y. D. Wu ◽

M. Hong ◽

C. A. Lin ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Metal Oxide ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel ◽

Effect Transistor

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Improvement of Channel Mobility for Trench Metal-Oxide-Semiconductor Field Effect Transistor by Smoothing Trench Sidewall Surface

Japanese Journal of Applied Physics ◽

10.1143/jjap.40.116 ◽

2001 ◽

Vol 40 (Part 1, No. 1) ◽

pp. 116-117

Author(s):

Akihiro Yahata ◽

Satoshi Urano ◽

Tomoki Inoue ◽

Takashi Shinohe

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Channel Mobility ◽

Effect Transistor ◽

Sidewall Surface

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The channel mobility degradation in a nanoscale metal–oxide–semiconductor field effect transistor due to injection from the ballistic contacts

Journal of Applied Physics ◽

10.1063/1.3554623 ◽

2011 ◽

Vol 109 (5) ◽

pp. 056103 ◽

Author(s):

Munawar A. Riyadi ◽

Vijay K. Arora

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Channel Mobility ◽

Mobility Degradation ◽

Effect Transistor

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Relationship between channel mobility and interface state density in SiC metal–oxide–semiconductor field-effect transistor

Journal of Applied Physics ◽

10.1063/1.1428085 ◽

2002 ◽

Vol 91 (3) ◽

pp. 1568-1571 ◽

Author(s):

Shinsuke Harada ◽

Ryoji Kosugi ◽

Junji Senzaki ◽

Won-Ju Cho ◽

Kenji Fukuda ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Interface State ◽

State Density ◽

Metal Oxide Semiconductor ◽

Interface State Density ◽

Oxide Semiconductor ◽

Channel Mobility ◽

Effect Transistor

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Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics

Scientific Reports ◽

10.1038/srep31585 ◽

2016 ◽

Vol 6 (1) ◽

Author(s):

Tsubasa Matsumoto ◽

Hiromitsu Kato ◽

Kazuhiro Oyama ◽

Toshiharu Makino ◽

Masahiko Ogura ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel ◽

Effect Transistor

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Improvement of Channel Mobility in Inversion-Type n-Channel GaN Metal–Oxide–Semiconductor Field-Effect Transistor by High-Temperature Annealing

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.7784 ◽

2008 ◽

Vol 47 (10) ◽

pp. 7784-7787 ◽

Author(s):

Kazuki Yamaji ◽

Masato Noborio ◽

Jun Suda ◽

Tsunenobu Kimoto

Keyword(s):

High Temperature ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Temperature Annealing ◽

Channel Mobility ◽

Effect Transistor

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