Optical and Electrical Characterization of Hydrogen-Plasma-Damaged Silicon Surface Structures and Its Impact on In-line Monitoring

2010 ◽  
Vol 49 (8) ◽  
pp. 08JD02 ◽  
Author(s):  
Yoshinori Nakakubo ◽  
Asahiko Matsuda ◽  
Masanaga Fukasawa ◽  
Yoshinori Takao ◽  
Tetsuya Tatsumi ◽  
...  
Keyword(s):  
Silicon Surface ◽  
Hydrogen Plasma ◽  
Electrical Characterization ◽  
Surface Structures

Process and Manufacturing Challenges for High-K Gate Stack Systems

1999 ◽  
Vol 567 ◽  
Author(s):  
M.C. Gilmer ◽  
T-Y Luo ◽  
H.R. Huff ◽  
M.D. Jackson ◽  
S. Kim ◽  
...  
Keyword(s):  
Silicon Surface ◽  
Gate Dielectrics ◽  
Electrical Characterization ◽  
Metal Electrode ◽  
Significant Variable ◽  
Tem Analysis ◽  
Physical Mechanisms ◽  
High K ◽  
Commercial Equipment

ABSTRACTA design-of-experiments methodology was implemented to assess the commercial equipment viability to fabricate the high-K dielectrics Ta2O5, TiO2 and BST (70/30 and 50/50 compositions) for use as gate dielectrics. The high-K dielectrics were annealed in 100% or 10% O2 for different times and temperatures in conjunction with a previously prepared NH3 nitrided or 14N implanted silicon surface. Five metal electrode configurations—Ta, TaN, W, WN and TiN—were concurrently examined. Three additional silicon surface configurations were explored in conjunction with a more in-depth set of time and temperature anneals for Ta2O5. Electrical characterization of capacitors fabricated with the above high-K gate dielectrics, as well as SIMS and TEM analysis, indicate that the post high-K deposition annealing temperature was the most significant variable impacting the leakage current density, although there was minimal influence on the capacitance. Further studies are required, however, to clarify the physical mechanisms underlying the electrical data presented.

Electrical characterization of a phenylacetylene-modified silicon surface via mercury probe

2007 ◽  
Vol 19 (44) ◽  
pp. 446003 ◽  
Author(s):  
R K Hiremath ◽  
B G Mulimani ◽  
M K Rabinal ◽  
I M Khazi
Keyword(s):  
Silicon Surface ◽  
Electrical Characterization

P-8: Hydrogen Plasma Treatment on the Electrical Characterization of Inverted Staggered Pentacene Thin Film Transistors

2003 ◽  
Vol 34 (1) ◽  
pp. 232
Author(s):  
Jae Won Chang ◽  
Hoon Kim ◽  
Jong Moo Kim ◽  
Jai-Kyeong Kim ◽  
Young-Chul Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Plasma Treatment ◽  
Thin Film Transistors ◽  
Hydrogen Plasma ◽  
Electrical Characterization

Electrical characterization of surface defects in GaSb created by hydrogen plasma

1995 ◽  
Vol 66 (15) ◽  
pp. 1986-1988 ◽  
Author(s):  
P. S. Dutta ◽  
K. S. Sangunni ◽  
H. L. Bhat ◽  
Vikram Kumar
Keyword(s):  
Surface Defects ◽  
Hydrogen Plasma ◽  
Electrical Characterization

Characterization of machined polystyrene foam

1989 ◽  
Vol 47 ◽  
pp. 372-373
Author(s):  
C. W. Price ◽  
E. F. Lindsey ◽  
R. M. Franks ◽  
M. A. Lane
Keyword(s):  
Surface Finish ◽  
Cell Walls ◽  
Surface Structures ◽  
Efficient Technique ◽  
Low Density ◽  
Polystyrene Foam ◽  
Planar Surfaces ◽  
Machining Characteristics

Diamond-point turning is an efficient technique for machining low-density polystyrene foam, and the surface finish can be substantially improved by grinding. However, both diamond-point turning and grinding tend to tear and fracture cell walls and leave asperities formed by agglomerations of fragmented cell walls. Vibratoming is proving to be an excellent technique to form planar surfaces in polystyrene, and the machining characteristics of vibratoming and diamond-point turning are compared.Our work has demonstrated that proper evaluation of surface structures in low density polystyrene foam requires stereoscopic examinations; tilts of + and − 3 1/2 degrees were used for the stereo pairs. Coating does not seriously distort low-density polystyrene foam. Therefore, the specimens were gold-palladium coated and examined in a Hitachi S-800 FESEM at 5 kV.

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