Theoretical Optimization of Base Doping Concentration for Radiation Resistance of InGaP Subcells of InGaP/GaAs/Ge Based on Minority-Carrier Lifetime

2010 ◽  
Vol 49 (12) ◽  
pp. 121201 ◽  
Author(s):  
Dalia Elfiky ◽  
Masafumi Yamaguchi ◽  
Takuo Sasaki ◽  
Tatsuya Takamoto ◽  
Chiharu Morioka ◽  
...  
Keyword(s):  
Radiation Resistance ◽  
Doping Concentration ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Base Doping

Influence of Substrate Properties on the Defectivity and Minority Carrier Lifetime in 4H-SiC Homoepitaxial Layers

2019 ◽  
Vol 963 ◽  
pp. 109-113
Author(s):  
Birgit Kallinger ◽  
Jürgen Erlekampf ◽  
Katharina Rosshirt ◽  
Patrick Berwian ◽  
Matthias Stockmeier ◽  
...  
Keyword(s):  
Doping Concentration ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Specific Resistivity ◽  
Dislocation Densities ◽  
Large Spread ◽  
Substrate Properties ◽  
Influence Of Substrate ◽  
Homoepitaxial Layers

Two fully loaded epitaxial growth runs with 16 wafers in total were conducted in the AIXTRON G5 WW reactor in order to keep epigrowth conditions constant. The wafers were selected with a large spread of specific resistivity and dislocation densities. The resulting epilayers showed very good intra-wafer homogeneities as well as excellent wafer-to-wafer and run-to-run reproducibility with regard to epilayer thickness and doping concentration, point defect concentrations of Z1/2 and EH6/7 and the resulting Shockley-Read-Hall carrier lifetime. We found that the dislocation densities of the underlying substrates are influencing the stacking fault densities of the epilayers, which then vary between 0.1 and 10 cm-2. A substrate effect on the effective minority carrier lifetime was found.

Microwave transmission method for measuring minority-carrier lifetime in silicon slices

1971 ◽  
Vol 7 (25) ◽  
pp. 754
Author(s):  
R.E. Thomas ◽  
V. Makios ◽  
S. Ogletree ◽  
R. Mckillican
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Transmission Method ◽  
Microwave Transmission

scholarly journals Marked enhancement of the photoresponsivity and minority-carrier lifetime of BaSi2 passivated with atomic hydrogen

2019 ◽  
Vol 3 (6) ◽  
Author(s):  
Zhihao Xu ◽  
Denis A. Shohonov ◽  
Andrew B. Filonov ◽  
Kazuhiro Gotoh ◽  
Tianguo Deng ◽  
...  
Keyword(s):  
Atomic Hydrogen ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Marked Enhancement
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