Freezing of Interstitial-Type Dislocation Loops Grown as Vacancy Sources in Nearly Perfect Aluminum Crystals

ABSTRACTNucleation of voids and vacancy-type dislocation loops in Si under vacancy supersaturation conditions has been considered. Based upon nucleation barrier calculations, it has been found that voids can be nucleated, but not dislocation loops. The homogeneous nucleation rate of voids has been calculated for different temperatures by assuming different enthalpy values of Si vacancy formation. The process of void growth due to precipitation of vacancies has been numerically simulated. Comparing results of the nucleation and the growth modeling and taking into account the competition between the two processes, the limited time available, and the crystal cooling rate after growth, it has been shown that homogeneous nucleation of voids to experimentally observed densities and void growth to observed sizes is possible if enthalpy of Si vacancy formation is within the range of 2.9 to 3.6 eV with the nucleation temperature in the range of 980–1080 °C.

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Formation of Vacancy-Type Dislocation Loops in Hydrogen-Ion-Implanted Fe–Cr Alloy

Acta Metallurgica Sinica (English Letters) ◽

10.1007/s40195-018-0807-4 ◽

2018 ◽

Vol 32 (5) ◽

pp. 566-572

Author(s):

Yu-Feng Du ◽

Li-Juan Cui ◽

Wen-Tuo Han ◽

Fa-Rong Wan

Keyword(s):

Hydrogen Ion ◽

Dislocation Loops ◽

Type Dislocation ◽

Ion Implanted

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Ostwald ripening of interstitial-type dislocation loops in 4H-silicon carbide

Journal of Applied Physics ◽

10.1063/1.2338142 ◽

2006 ◽

Vol 100 (5) ◽

pp. 053521 ◽

Cited By ~ 10

Author(s):

P. O. Å. Persson ◽

L. Hultman ◽

M. S. Janson ◽

A. Hallén

Keyword(s):

Silicon Carbide ◽

Ostwald Ripening ◽

Dislocation Loops ◽

Type Dislocation

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Possible mechanism of homogeneous nucleation, growth and annealing of interstitial-type dislocation loops in pure FCC metals

Radiation Effects ◽

10.1080/00337578708221248 ◽

1987 ◽

Vol 103 (1-4) ◽

pp. 141-147

Author(s):

V. G. Chudinov ◽

V. I. Protasov ◽

O. A. Zalukovskaya

Keyword(s):

Homogeneous Nucleation ◽

Dislocation Loops ◽

Fcc Metals ◽

Type Dislocation ◽

Nucleation Growth

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New Type Dislocation Loops in Quenched Aluminum

Journal of the Physical Society of Japan ◽

10.1143/jpsj.18.1590 ◽

1963 ◽

Vol 18 (11) ◽

pp. 1590-1593 ◽

Cited By ~ 32

Author(s):

Sho Yoshida ◽

Yoshihara Shimomura

Keyword(s):

Dislocation Loops ◽

New Type ◽

Type Dislocation

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Defect Formation During Zn Diffusion into GaAs

MRS Proceedings ◽

10.1557/proc-163-659 ◽

1989 ◽

Vol 163 ◽

Cited By ~ 6

Author(s):

Martina Luysberg ◽

W. Jäger ◽

K. Urban ◽

M. Perret ◽

N.A. Stolwijk ◽

...

Keyword(s):

Defect Formation ◽

Analytical Electron Microscopy ◽

Surface Region ◽

Dislocation Loops ◽

Diffusion Front ◽

Near Surface ◽

Zn Diffusion ◽

Zn Concentration ◽

Analytical Electron ◽

Type Dislocation

AbstractThe microstructure induced by the Zn diffusion at 1170 K into doped and undoped semi-insulating GaAs single crystals was characterized for various diffusion times t < 1740 min by analytical electron microscopy. The results were compared with Zn concentration profiles obtained by spreading resistance measurements (SRM) on the same samples. At the diffusion front the formation of prismatic interstitial dislocation loops, dislocation networks, and of cavities partly filled with Ga was observed. Closer to the surface facetted voids and, for the undoped samples, vacancy-type dislocation loops formed. The near surface region of highest Zn-concentration showed a high density of Zn-rich precipitates. A model is presented which accounts .for these observations. It is based on fast interstitial Zn diffusion and the kick-out mechanism for interstitial-substituional exchange.

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