scholarly journals In-situ study of one-dimensional motion of interstitial-type dislocation loops in hydrogen-ion-implanted aluminum

2022 ◽  
Vol 71 (1) ◽  
pp. 016102-016102
Author(s):  
Li Ran-Ran ◽  
◽  
Zhang Yi-Fan ◽  
Yin Yu-Peng ◽  
Watanabe Hideo ◽  
...  
2018 ◽  
Vol 32 (5) ◽  
pp. 566-572
Author(s):  
Yu-Feng Du ◽  
Li-Juan Cui ◽  
Wen-Tuo Han ◽  
Fa-Rong Wan

Author(s):  
J. Bentley ◽  
L. D. Stephenson ◽  
R. B. Benson ◽  
P. A. Parrish

As part of an analytical electron microscopy study of aluminum ion-implanted with molybdenum, in situ annealing experiments have been performed to better understand the phase transformation mechanisms in material with a peak molybdenum content of approximately 11 at. % Mo. Ion implantations were performed at the Naval Research Laboratory on electropolished coupons 38 × 28 × 0.5 mm of 99.999% Al with 0.5 mm grain size. A dual energy implant schedule of 1.12 × 1020 ions/m2 at 50 keV. plus 1.24 × 1020 ions/m2 at 110 keV was employed. The TEM specimens were prepared by electrodischarge machining 3-mm diameter disks from the implanted coupons and backthinning by electropolishing. In situ annealing was performed in a Philips EM 400T/FEG with the use of a Philips single-tilt heating holder. Videotape recordings were made from the TEM fluorescent viewing screen in the tilted position.A high concentration of small dislocation loops and possibly a tangled dislocation network were present in the as-implanted material. No precipitates were observed; this is consistent with a supersaturated solid solution.


2006 ◽  
Vol 512 ◽  
pp. 103-106 ◽  
Author(s):  
K. Arakawa ◽  
Hirotaro Mori

Extensive simulations based on classical molecular dynamics have shown that small interstitial-type perfect dislocation loops in various metals and alloys have the structure of bundles of crowdions and a loop can easily makes the one-dimensional glide motion due to almost independent motion of crowdions in the loop. However, the experimental knowledge on the motion of loops is not enough. The present study dynamically examined the motion process of loops in pure iron under 1000 keV electron irradiation and thermal annealing by using transmission electron microscopy under which loops could move. Two types of loops were formed by irradiation. Loops of one type possessed the Burgers vector of 1/2<111> and the habit plane of {011}, and loops of the other type were <001> {001}. Loops of the former type made back-andforth glide motion and expansion towards the direction along their Burgers vectors when they were smaller than about a few-ten nanometers in diameter. This strongly suggests that these small 1/2<111> loops have the structure of the bundle of crowdions. Loops of the latter type only rarely moved less frequently when they were smaller than about the same size. When loops of two types grew larger than about 50 nm, the characteristics of the motion of loops changed drastically. Dislocation segments of each large loop made long-distance glide independently of their opposite segments, and the habit plane deviated from the original ones. This kind of motion means that selfinterstitial atoms at the central region of such large loops are no longer the crowdions.


Author(s):  
D.I. Potter ◽  
A. Taylor

Thermal aging of Ni-12.8 at. % A1 and Ni-12.7 at. % Si produces spatially homogeneous dispersions of cuboidal γ'-Ni3Al or Ni3Si precipitate particles arrayed in the Ni solid solution. We have used 3.5-MeV 58Ni+ ion irradiation to examine the effect of irradiation during precipitation on precipitate morphology and distribution. The nearness of free surfaces produced unusual morphologies in foils thinned prior to irradiation. These thin-foil effects will be important during in-situ investigations of precipitation in the HVEM. The thin foil results can be interpreted in terms of observations from bulk irradiations which are described first.Figure 1a is a dark field image of the γ' precipitate 5000 Å beneath the surface(∿1200 Å short of peak damage) of the Ni-Al alloy irradiated in bulk form. The inhomogeneous spatial distribution of γ' results from the presence of voids and dislocation loops which can be seen in the bright field image of the same area, Fig. 1b.


Author(s):  
J.A. Lambert ◽  
P.S. Dobson

The defect structure of ion-implanted silicon, which has been annealed in the temperature range 800°C-1100°C, consists of extrinsic Frank faulted loops and perfect dislocation loops, together with‘rod like’ defects elongated along <110> directions. Various structures have been suggested for the elongated defects and it was argued that an extrinsically faulted Frank loop could undergo partial shear to yield an intrinsically faulted defect having a Burgers vector of 1/6 <411>.This defect has been observed in boron implanted silicon (1015 B+ cm-2 40KeV) and a detailed contrast analysis has confirmed the proposed structure.


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