Nucleation and Growth of Voids in Silicon

1997 ◽  
Vol 490 ◽  
Author(s):  
P. S. Plekhanov ◽  
U. M. Gösele ◽  
T. Y. Tan

ABSTRACTNucleation of voids and vacancy-type dislocation loops in Si under vacancy supersaturation conditions has been considered. Based upon nucleation barrier calculations, it has been found that voids can be nucleated, but not dislocation loops. The homogeneous nucleation rate of voids has been calculated for different temperatures by assuming different enthalpy values of Si vacancy formation. The process of void growth due to precipitation of vacancies has been numerically simulated. Comparing results of the nucleation and the growth modeling and taking into account the competition between the two processes, the limited time available, and the crystal cooling rate after growth, it has been shown that homogeneous nucleation of voids to experimentally observed densities and void growth to observed sizes is possible if enthalpy of Si vacancy formation is within the range of 2.9 to 3.6 eV with the nucleation temperature in the range of 980–1080 °C.

Author(s):  
J. L. Brimhall ◽  
H. E. Kissinger ◽  
B. Mastel

Some information on the size and density of voids that develop in several high purity metals and alloys during irradiation with neutrons at elevated temperatures has been reported as a function of irradiation parameters. An area of particular interest is the nucleation and early growth stage of voids. It is the purpose of this paper to describe the microstructure in high purity nickel after irradiation to a very low but constant neutron exposure at three different temperatures.Annealed specimens of 99-997% pure nickel in the form of foils 75μ thick were irradiated in a capsule to a total fluence of 2.2 × 1019 n/cm2 (E > 1.0 MeV). The capsule consisted of three temperature zones maintained by heaters and monitored by thermocouples at 350, 400, and 450°C, respectively. The temperature was automatically dropped to 60°C while the reactor was down.


1980 ◽  
Vol 95 (1-2) ◽  
pp. 44-45 ◽  
Author(s):  
R.M. Mayer ◽  
L.M. Brown ◽  
U. Gösele

2014 ◽  
Vol 455 (1-3) ◽  
pp. 253-257 ◽  
Author(s):  
Farong Wan ◽  
Qian Zhan ◽  
Yi Long ◽  
Shanwu Yang ◽  
Gaowei Zhang ◽  
...  

1983 ◽  
Vol 104 (4) ◽  
pp. 535-552 ◽  
Author(s):  
M.P. Firestone ◽  
R. De Levie ◽  
S.K. Rangarajan

2018 ◽  
Vol 115 (14) ◽  
pp. 3575-3580 ◽  
Author(s):  
L. Li ◽  
A. J. Fijneman ◽  
J. A. Kaandorp ◽  
J. Aizenberg ◽  
W. L. Noorduin

Controlling nucleation and growth is crucial in biological and artificial mineralization and self-assembly processes. The nucleation barrier is determined by the chemistry of the interfaces at which crystallization occurs and local supersaturation. Although chemically tailored substrates and lattice mismatches are routinely used to modify energy landscape at the substrate/nucleus interface and thereby steer heterogeneous nucleation, strategies to combine this with control over local supersaturations have remained virtually unexplored. Here we demonstrate simultaneous control over both parameters to direct the positioning and growth direction of mineralizing compounds on preselected polymorphic substrates. We exploit the polymorphic nature of calcium carbonate (CaCO3) to locally manipulate the carbonate concentration and lattice mismatch between the nucleus and substrate, such that barium carbonate (BaCO3) and strontium carbonate (SrCO3) nucleate only on specific CaCO3 polymorphs. Based on this approach we position different materials and shapes on predetermined CaCO3 polymorphs in sequential steps, and guide the growth direction using locally created supersaturations. These results shed light on nature’s remarkable mineralization capabilities and outline fabrication strategies for advanced materials, such as ceramics, photonic structures, and semiconductors.


2022 ◽  
Vol 71 (1) ◽  
pp. 016102-016102
Author(s):  
Li Ran-Ran ◽  
◽  
Zhang Yi-Fan ◽  
Yin Yu-Peng ◽  
Watanabe Hideo ◽  
...  

1990 ◽  
Vol 205 ◽  
Author(s):  
U. Köster ◽  
U. Schünemann ◽  
G.B. Stephenson ◽  
S. Brauer ◽  
M. Sutton

Crystallization of metal-metalloid glasses is known to proceed by nucleation and growth processes. Using crystallization statistics in partially crystallized glasses, at temperatures below the glass transition temperature, time-dependent heterogeneous nucleation has been found to occur at a number of quenched-in nucleation sites [1]. Close to the glass transition temperature crystallization proceeds so rapidly that partially crystallized microstructures could not be obtained. Initial results from fully crystallized glasses exhibit evidence for a transient homogeneous nucleation process at higher temperatures [1,2].


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