Comparison of the Effects of the Doping-Compensation and Magnetic-Field on the Metal–Insulator Transition of Ge:Ga

2003 ◽  
Vol 72 (Suppl.A) ◽  
pp. 181-182
Author(s):  
Kohei M. Itoh ◽  
Michio Watanabe ◽  
Youiti Ootuka ◽  
Eugene E. Haller
2017 ◽  
Vol 5 (20) ◽  
pp. 4967-4976 ◽  
Author(s):  
Amber M. Larson ◽  
Brandon Wilfong ◽  
Pouya Moetakef ◽  
Craig M. Brown ◽  
Peter Zavalij ◽  
...  

Bi1.7V8O16 undergoes a metal-to-insulator transition driven by charge and orbital ordering that can be tuned by an applied magnetic field.


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