Analysis and implications of parasitic and screening effects on the high-frequency/RF performance of tunneling-carbon nanotube FETs

2008 ◽  
Author(s):  
Chaitanya Kshirsagar ◽  
Mohamed N. El-Zeftawi ◽  
Kaustav Banerjee
Keyword(s):  
Carbon Nanotube ◽  
High Frequency ◽  
Rf Performance ◽  
Carbon Nanotube Fets

scholarly journals Multifunctional high-frequency circuit capabilities of ambipolar carbon nanotube FETs

2021 ◽  
pp. 1-1
Author(s):  
Javier Noe Ramos-Silva ◽  
Anibal Pacheco-Sanchez ◽  
Eloy Ramirez-Garcia ◽  
David Jimenez
Keyword(s):  
Carbon Nanotube ◽  
High Frequency ◽  
Carbon Nanotube Fets

scholarly journals Improving the RF Performance of Carbon Nanotube Field Effect Transistor

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
S. Hamieh
Keyword(s):  
Carbon Nanotube ◽  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Cutoff Frequency ◽  
Parasitic Capacitance ◽  
Transistor Channel ◽  
Performance Limit ◽  
Rf Performance ◽  
High Frequency Performance

Compact model of single-walled semiconducting carbon nanotube field-effect transistors (CNTFETs) implementing the calculation of energy conduction subband minima under VHDLAMS simulator is used to explore the high-frequency performance potential of CNTFET. The cutoff frequency expected for a MOSFET-like CNTFET is well below the performance limit, due to the large parasitic capacitance between electrodes. We show that using an array of parallel nanotubes as the transistor channel combined in a finger geometry to produce a single transistor significantly reduces the parasitic capacitance per tube and, thereby, improves high-frequency performance.

scholarly journals Regional Signal-Delay Analysis Applied to High-Frequency Carbon Nanotube FETs

2007 ◽  
Vol 6 (6) ◽  
pp. 711-717 ◽  
Author(s):  
D.L. Pulfrey ◽  
L.C. Castro ◽  
D.L. John ◽  
M. Vaidyanathan
Keyword(s):  
Carbon Nanotube ◽  
High Frequency ◽  
Delay Analysis ◽  
Signal Delay ◽  
Carbon Nanotube Fets
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