carbon nanotube fets Latest Research Papers

Analysis of High Field effect Mobility in Carbon Nanotube FETs(CNTFETs)

10.1109/conecct52877.2021.9622595 ◽

2021 ◽

Author(s):

Satyam Kumar Singh ◽

Basavprasad Siriyannavar ◽

Sidharth Sitesh ◽

P. Vimala ◽

T.S. Arunsamuel

Keyword(s):

Carbon Nanotube ◽

Field Effect ◽

High Field ◽

Field Effect Mobility ◽

Carbon Nanotube Fets

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Analog/RF performance assessment of ferroelectric junctionless carbon nanotube FETs: A quantum simulation study

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2021.114915 ◽

2021 ◽

pp. 114915

Author(s):

Khalil Tamersit ◽

Mohammad Khaleqi Qaleh Jooq ◽

Mohammad Hossein Moaiyeri

Keyword(s):

Carbon Nanotube ◽

Performance Assessment ◽

Simulation Study ◽

Quantum Simulation ◽

Rf Performance ◽

Carbon Nanotube Fets

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Top-Gated Carbon Nanotube FETs from Quantum Simulations: Comparison with Experiments

2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) ◽

10.1109/vlsi-tsa51926.2021.9440104 ◽

2021 ◽

Author(s):

A. Sanchez-Soares ◽

T. Kelly ◽

G. Fagas ◽

J.C. Greer ◽

E. Chen

Keyword(s):

Carbon Nanotube ◽

Quantum Simulations ◽

Comparison With Experiments ◽

Carbon Nanotube Fets

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Multifunctional high-frequency circuit capabilities of ambipolar carbon nanotube FETs

IEEE Transactions on Nanotechnology ◽

10.1109/tnano.2021.3082867 ◽

2021 ◽

pp. 1-1

Author(s):

Javier Noe Ramos-Silva ◽

Anibal Pacheco-Sanchez ◽

Eloy Ramirez-Garcia ◽

David Jimenez

Keyword(s):

Carbon Nanotube ◽

High Frequency ◽

Carbon Nanotube Fets

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Sub-0.5 nm Interfacial Dielectric Enables Superior Electrostatics: 65 mV/dec Top-Gated Carbon Nanotube FETs at 15 nm Gate Length

2020 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm13553.2020.9371899 ◽

2020 ◽

Author(s):

G. Pitner ◽

Z. Zhang ◽

Q. Lin ◽

S.-K Su ◽

C. Gilardi ◽

...

Keyword(s):

Carbon Nanotube ◽

Gate Length ◽

Carbon Nanotube Fets

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Analysis of the Impact of Process Variations and Manufacturing Defects on the Performance of Carbon-Nanotube FETs

IEEE Transactions on Very Large Scale Integration (VLSI) Systems ◽

10.1109/tvlsi.2020.2976734 ◽

2020 ◽

Vol 28 (6) ◽

pp. 1513-1526

Author(s):

Sanmitra Banerjee ◽

Arjun Chaudhuri ◽

Krishnendu Chakrabarty

Keyword(s):

Carbon Nanotube ◽

Process Variations ◽

Manufacturing Defects ◽

The Impact ◽

Carbon Nanotube Fets

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Bias-Dependent Contact Resistance Characterization of Carbon Nanotube FETs

IEEE Transactions on Nanotechnology ◽

10.1109/tnano.2019.2958677 ◽

2020 ◽

Vol 19 ◽

pp. 47-51 ◽

Cited By ~ 3

Author(s):

Anibal Pacheco-Sanchez ◽

Martin Claus

Keyword(s):

Carbon Nanotube ◽

Contact Resistance ◽

Carbon Nanotube Fets

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Analysis of process parameter variation in emerging carbon nanotube FETs

10.1063/5.0004533 ◽

2020 ◽

Author(s):

T. N. Shilpa ◽

K. R. Ajayan

Keyword(s):

Carbon Nanotube ◽

Parameter Variation ◽

Process Parameter ◽

Carbon Nanotube Fets

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Ultra-Compact Ternary Logic Gates Based on Negative Capacitance Carbon Nanotube FETs

IEEE Transactions on Circuits & Systems II Express Briefs ◽

10.1109/tcsii.2020.3047265 ◽

2020 ◽

pp. 1-1

Author(s):

Mohammad Khaleqi Qaleh Jooq ◽

Mohammad Hossein Moaiyeri ◽

Khalil Tamersit

Keyword(s):

Carbon Nanotube ◽

Logic Gates ◽

Negative Capacitance ◽

Ternary Logic ◽

Carbon Nanotube Fets

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A high-performance 5-to-2 compressor cell based on carbon nanotube FETs

International Journal of Electronics ◽

10.1080/00207217.2019.1576230 ◽

2019 ◽

Vol 106 (6) ◽

pp. 912-927 ◽

Cited By ~ 3

Author(s):

Mehdi Bagherizadeh ◽

Mohammad Hossein Moaiyeri ◽

Mohammad Eshghi

Keyword(s):

Carbon Nanotube ◽

High Performance ◽

Carbon Nanotube Fets

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carbon nanotube fets
Recently Published Documents

TOTAL DOCUMENTS

H-INDEX

Analysis of High Field effect Mobility in Carbon Nanotube FETs(CNTFETs)

Analog/RF performance assessment of ferroelectric junctionless carbon nanotube FETs: A quantum simulation study

Top-Gated Carbon Nanotube FETs from Quantum Simulations: Comparison with Experiments

Multifunctional high-frequency circuit capabilities of ambipolar carbon nanotube FETs

Sub-0.5 nm Interfacial Dielectric Enables Superior Electrostatics: 65 mV/dec Top-Gated Carbon Nanotube FETs at 15 nm Gate Length

Analysis of the Impact of Process Variations and Manufacturing Defects on the Performance of Carbon-Nanotube FETs

Bias-Dependent Contact Resistance Characterization of Carbon Nanotube FETs

Analysis of process parameter variation in emerging carbon nanotube FETs

Ultra-Compact Ternary Logic Gates Based on Negative Capacitance Carbon Nanotube FETs

A high-performance 5-to-2 compressor cell based on carbon nanotube FETs

Export Citation Format

carbon nanotube fetsRecently Published Documents

TOTAL DOCUMENTS

H-INDEX

Analysis of High Field effect Mobility in Carbon Nanotube FETs(CNTFETs)

Analog/RF performance assessment of ferroelectric junctionless carbon nanotube FETs: A quantum simulation study

Top-Gated Carbon Nanotube FETs from Quantum Simulations: Comparison with Experiments

Multifunctional high-frequency circuit capabilities of ambipolar carbon nanotube FETs

Sub-0.5 nm Interfacial Dielectric Enables Superior Electrostatics: 65 mV/dec Top-Gated Carbon Nanotube FETs at 15 nm Gate Length

Analysis of the Impact of Process Variations and Manufacturing Defects on the Performance of Carbon-Nanotube FETs

Bias-Dependent Contact Resistance Characterization of Carbon Nanotube FETs

Analysis of process parameter variation in emerging carbon nanotube FETs

Ultra-Compact Ternary Logic Gates Based on Negative Capacitance Carbon Nanotube FETs

A high-performance 5-to-2 compressor cell based on carbon nanotube FETs

carbon nanotube fets
Recently Published Documents