Analog/RF performance assessment of ferroelectric junctionless carbon nanotube FETs: A quantum simulation study

Dynamic Two-Port Parameters of Ballistic Carbon Nanotube FETs: A Quantum Simulation Study

2007 65th Annual Device Research Conference ◽

10.1109/drc.2007.4373671 ◽

2007 ◽

Author(s):

Yijian Ouyang ◽

Jing Guo

Keyword(s):

Carbon Nanotube ◽

Simulation Study ◽

Quantum Simulation ◽

Performance Assessment of a New Radiation Dosimeter Based on Carbon Nanotube Field-Effect Transistor: A Quantum Simulation Study

IEEE Sensors Journal ◽

10.1109/jsen.2019.2894440 ◽

2019 ◽

Vol 19 (9) ◽

pp. 3314-3321 ◽

Cited By ~ 9

Author(s):

Khalil Tamersit

Keyword(s):

Carbon Nanotube ◽

Performance Assessment ◽

Simulation Study ◽

Field Effect ◽

Field Effect Transistor ◽

Quantum Simulation ◽

Analysis and implications of parasitic and screening effects on the high-frequency/RF performance of tunneling-carbon nanotube FETs

Proceedings of the 45th annual conference on Design automation - DAC '08 ◽

10.1145/1391469.1391533 ◽

2008 ◽

Cited By ~ 4

Author(s):

Chaitanya Kshirsagar ◽

Mohamed N. El-Zeftawi ◽

Kaustav Banerjee

Keyword(s):

Carbon Nanotube ◽

High Frequency ◽

Rf Performance ◽

Impact of Temperature Variation on Performance of Carbon Nanotube Field-Effect Transistor—Based on Chaotic Oscillator: A Quantum Simulation Study

Chinese Physics Letters ◽

10.1088/0256-307x/32/3/038201 ◽

2015 ◽

Vol 32 (3) ◽

pp. 038201 ◽

Cited By ~ 1

Author(s):

Ha Nguyen Van ◽

Song Hanjung

Keyword(s):

Carbon Nanotube ◽

Temperature Variation ◽

Simulation Study ◽

Field Effect ◽

Field Effect Transistor ◽

Quantum Simulation ◽

Chaotic Oscillator ◽

Quantum Simulation Study of a New Carbon Nanotube Field-Effect Transistor With Electrically Induced Source/Drain Extension

IEEE Transactions on Device and Materials Reliability ◽

10.1109/tdmr.2009.2015458 ◽

2009 ◽

Vol 9 (2) ◽

pp. 237-243 ◽

Cited By ~ 26

Author(s):

Z. Arefinia ◽

A.A. Orouji

Keyword(s):

Carbon Nanotube ◽

Simulation Study ◽

Field Effect ◽

Field Effect Transistor ◽

Quantum Simulation ◽

A Compact Virtual-Source Model for Carbon Nanotube FETs in the Sub-10-nm Regime—Part II: Extrinsic Elements, Performance Assessment, and Design Optimization

IEEE Transactions on Electron Devices ◽

10.1109/ted.2015.2457424 ◽

2015 ◽

Vol 62 (9) ◽

pp. 3070-3078 ◽

Cited By ~ 54

Author(s):

Chi-Shuen Lee ◽

Eric Pop ◽

Aaron D. Franklin ◽

Wilfried Haensch ◽

Hon-Sum Philip Wong

Keyword(s):

Carbon Nanotube ◽

Design Optimization ◽

Performance Assessment ◽

Source Model ◽

Virtual Source ◽

Impact of single halo implantation on the carbon nanotube field-effect transistor: A quantum simulation study

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2008.07.003 ◽

2008 ◽

Vol 41 (2) ◽

pp. 196-201 ◽

Cited By ~ 23

Author(s):

Zahra Arefinia ◽

Ali A. Orouji

Keyword(s):

Carbon Nanotube ◽

Simulation Study ◽

Field Effect ◽

Field Effect Transistor ◽

Quantum Simulation ◽

Attributes in the Performance and Design Considerations of Asymmetric Drain and Source Regions in Carbon Nanotube Field Effect Transistors: Quantum Simulation Study

ECS Journal of Solid State Science and Technology ◽

10.1149/2.0061607jss ◽

2016 ◽

Vol 5 (7) ◽

pp. M63-M68 ◽

Cited By ~ 13

Author(s):

Ali Naderi ◽

Seyed Abolfazl Ahmadmiri

Keyword(s):

Carbon Nanotube ◽

Simulation Study ◽

Field Effect ◽

Field Effect Transistors ◽

Quantum Simulation ◽

Design Considerations ◽

Source Regions

Improved performance of nanoscale junctionless carbon nanotube tunneling FETs using dual-material source gate design: A quantum simulation study

AEU - International Journal of Electronics and Communications ◽

10.1016/j.aeue.2020.153491 ◽

2020 ◽

Vol 127 ◽

pp. 153491 ◽

Cited By ~ 1

Author(s):

Khalil Tamersit

Keyword(s):

Carbon Nanotube ◽

Simulation Study ◽

Quantum Simulation ◽

Material Source ◽

Improved Performance ◽

Dual Material ◽

Gate Design

Millimeter Wave Integrated Circuits

Systematic Approaches for Analysis and Design of Terahertz and Millimeter-Wave Integrated Circuits Using Carbon Nanotube FETs

Canadian Journal of Electrical and Computer Engineering ◽

10.1109/cjece.2015.2447533 ◽

2016 ◽

Vol 39 (2) ◽

pp. 92-102 ◽

Cited By ~ 6

Author(s):

Siavash Moghadami ◽

Farzaneh JalaliBidgoli ◽

Shahab Ardalan

Keyword(s):

Carbon Nanotube ◽

Integrated Circuits ◽

Millimeter Wave ◽

Analysis And Design ◽

Carbon Nanotube Fets ◽