Decision of Line Structure beyond Junctions Using U-Net-Based CNN for Line Drawing Rendering

2021 ◽  
Author(s):  
Ryogo Ito ◽  
Mitsuhiro Uchida ◽  
Suguru Saito
Keyword(s):  
Line Drawing ◽  
Line Structure

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

1995 ◽  
Vol 53 ◽  
pp. 256-257
Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Effect ◽  
Line Drawing ◽  
Chemical Vapor ◽  
Environmental Cell ◽  
Engineering Changes ◽  
Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

Bit line structure of 64 K dynamic RAM

1981 ◽  
Vol 64 (11) ◽  
pp. 112-120
Author(s):  
Hideyuki Ozaki ◽  
Kazuhiro Shimotori ◽  
Kazuyasu Fujishima ◽  
Takao Nakano
Keyword(s):  
Line Structure

An Improved Design for Ka-Band Phase Shifter Using Distributed MEMS Transmission Line Structure

PIERS Online ◽  
2005 ◽  
Vol 1 (5) ◽  
pp. 594-597 ◽  
Author(s):  
Boshi Jin ◽  
Haoyuan She ◽  
Yuemei Qin ◽  
Jiahui Fu ◽  
Qun Wu ◽  
...  
Keyword(s):  
Transmission Line ◽  
Phase Shifter ◽  
Ka Band ◽  
Line Structure ◽  
Improved Design

A UHF Compact Complex Impedance-transforming Balun with High Isolation

2020 ◽  
Vol 13 (8) ◽  
pp. 1135-1144
Author(s):  
Kittipong Nithiporndecha ◽  
Chatrpol Pakasiri
Keyword(s):  
Complex Impedance ◽  
Output Port ◽  
Reflection Coefficients ◽  
Coupled Line ◽  
High Isolation ◽  
Line Structure ◽  
Source Impedance ◽  
Phase Balance ◽  
High Output

Background: A compact complex impedance-transforming balun for UHF frequencies, which is based on a coupled-line structure that matched all ports and provided high output port isolation, was designed in this paper. Methods: A lumped component transformation was used to minimize circuit size. The implemented circuit operated at 433 MHz with the reflection coefficients less than -16 dB at all ports, 0.22 dB amplitude balance and 180° phase balance at the output ports. The signal coupling between the output ports was -16.8 dB. The circuit size is small at 0.032λ. Results: Complex impedance-transforming baluns were designed to operate at 433 MHz. The source impedance at port 1 was set at Zs = 12 - j12Ω and the load impedances at port 2 and 3 were set at ZL = 80 + j30Ω. Conclusion: A compact complex impedance-transforming balun at UHF frequency, with all ports matched and high isolations, was designed and illustrated in this paper.

POLYGONAL APPROXIMATION OF DIGITAL CURVE BASED ON REVERSE ENGINEERING CONCEPT

2013 ◽  
Vol 13 (04) ◽  
pp. 1350017 ◽  
Author(s):  
KUMAR S. RAY ◽  
BIMAL KUMAR RAY
Keyword(s):  
Reverse Engineering ◽  
Linear Time ◽  
Line Drawing ◽  
Approximation Error ◽  
Zero Approximation ◽  
Polygonal Approximation ◽  
Digital Curve ◽  
Symmetric Approximation ◽  
Engineering Concept ◽  
Automatic Algorithm

This paper applies reverse engineering on the Bresenham's line drawing algorithm [J. E. Bresenham, IBM System Journal, 4, 106–111 (1965)] for polygonal approximation of digital curve. The proposed method has a number of features, namely, it is sequential and runs in linear time, produces symmetric approximation from symmetric digital curve, is an automatic algorithm and the approximating polygon has the least non-zero approximation error as compared to other algorithms.

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