scholarly journals Novel Electrostatically Doped Planar Field-Effect Transistor for High Temperature Applications

2014 ◽  
Vol 64 (12) ◽  
pp. 11-24 ◽  
Author(s):  
T. A. Krauss ◽  
F. Wessely ◽  
U. Schwalke
Keyword(s):  
High Temperature ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Temperature Applications

InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature applications

2000 ◽  
Vol 36 (22) ◽  
pp. 1886 ◽  
Author(s):  
Kuo-Hui Yu ◽  
Kun-Wei Lin ◽  
Chin-Chuan Cheng ◽  
Kuan-Po Lin ◽  
Chih-Hung Yen ◽  
...  
Keyword(s):  
High Temperature ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Temperature Applications

Thin film diamond metal-insulator field effect transistor for high temperature applications

1997 ◽  
Vol 46 (1-3) ◽  
pp. 124-128 ◽  
Author(s):  
Lisa Y.S. Pang ◽  
Simon S.M. Chan ◽  
Paul R. Chalker ◽  
Colin Johnston ◽  
Richard B. Jackman
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Insulator ◽  
Effect Transistor ◽  
Temperature Applications

Diamond Metal-Semiconductor Field Effect Transistor for High Temperature Applications

2019 ◽  
Author(s):  
Yuelin Wu ◽  
Cristian Herrera ◽  
Aaron Hardy ◽  
Matthias Muehle ◽  
Tom Zimmermann ◽  
...  
Keyword(s):  
High Temperature ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Temperature Applications

Development of an SiC Multichip Phase-Leg Module for High-Temperature and High-Frequency Applications

2016 ◽  
Vol 13 (2) ◽  
pp. 39-50 ◽  
Author(s):  
Zheng Chen ◽  
Yiying Yao ◽  
Wenli Zhang ◽  
Dushan Boroyevich ◽  
Khai Ngo ◽  
...  
Keyword(s):  
High Temperature ◽  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Operating Temperature ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Packaging Materials ◽  
Temperature Capability ◽  
Effect Transistor

This article presents a 1,200-V, 120-A silicon carbide metal-oxide-semiconductor field-effect transistor (SiC MOSFET) phase-leg module capable of operating at 200°C ambient temperature. Paralleling six 20-A MOSFET bare dice for each switch, this module outperforms the commercial SiC modules in higher operating temperature and lower package parasitics at a comparable power rating. The module's high-temperature capability is validated through the extensive characterizations of the SiC MOSFET, as well as the careful selections of suitable packaging materials. Particularly, the sealed-step-edge technology is implemented on the direct-bonded-copper substrates to improve the module's thermal cycling lifetime. Though still based on the regular wire-bond structure, the module is able to achieve over 40% reduction in the switching loop inductance compared with a commercial SiC module by optimizing its internal layout. By further embedding decoupling capacitors directly on the substrates, the module also allows SiC MOSFETs to be switched twice faster with only one-third turn-off overvoltages compared with the commercial module.

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