Reliability of GaN Metal Semiconductor Field-Effect Transistor at High Temperature

This article presents a 1,200-V, 120-A silicon carbide metal-oxide-semiconductor field-effect transistor (SiC MOSFET) phase-leg module capable of operating at 200°C ambient temperature. Paralleling six 20-A MOSFET bare dice for each switch, this module outperforms the commercial SiC modules in higher operating temperature and lower package parasitics at a comparable power rating. The module's high-temperature capability is validated through the extensive characterizations of the SiC MOSFET, as well as the careful selections of suitable packaging materials. Particularly, the sealed-step-edge technology is implemented on the direct-bonded-copper substrates to improve the module's thermal cycling lifetime. Though still based on the regular wire-bond structure, the module is able to achieve over 40% reduction in the switching loop inductance compared with a commercial SiC module by optimizing its internal layout. By further embedding decoupling capacitors directly on the substrates, the module also allows SiC MOSFETs to be switched twice faster with only one-third turn-off overvoltages compared with the commercial module.

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Performance Assessment of Polarity Tunable- Ferroelectric-Field Effect Transistor at High Temperature —Part II

2020 5th International Conference on Devices, Circuits and Systems (ICDCS) ◽

10.1109/icdcs48716.2020.243575 ◽

2020 ◽

Author(s):

Priyanka Pandey ◽

Harsupreet Kaur

Keyword(s):

High Temperature ◽

Performance Assessment ◽

Field Effect ◽

Field Effect Transistor ◽

Effect Transistor

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Performance Assessment of Polarity Tunable- Ferroelectric-Field Effect Transistor at High Temperature —Part I

2020 5th International Conference on Devices, Circuits and Systems (ICDCS) ◽

10.1109/icdcs48716.2020.243574 ◽

2020 ◽

Author(s):

Priyanka Pandey ◽

Harsupreet Kaur

Keyword(s):

High Temperature ◽

Performance Assessment ◽

Field Effect ◽

Field Effect Transistor ◽

Effect Transistor

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InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature applications

Electronics Letters ◽

10.1049/el:20001232 ◽

2000 ◽

Vol 36 (22) ◽

pp. 1886 ◽

Cited By ~ 4

Author(s):

Kuo-Hui Yu ◽

Kun-Wei Lin ◽

Chin-Chuan Cheng ◽

Kuan-Po Lin ◽

Chih-Hung Yen ◽

...

Keyword(s):

High Temperature ◽

Field Effect ◽

Field Effect Transistor ◽

Effect Transistor ◽

Temperature Applications

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Fabrication and Characterisation of 1200V 4H-SiC VJFET

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.716-717.1434 ◽

2014 ◽

Vol 716-717 ◽

pp. 1434-1437

Author(s):

Gang Chen ◽

Song Bai ◽

Ao Liu ◽

Run Hua Huang ◽

Yong Hong Tao ◽

...

Keyword(s):

High Temperature ◽

Continuous Improvement ◽

Field Effect ◽

Field Effect Transistor ◽

Vertical Channel ◽

Drain Current ◽

Power Devices ◽

Reverse Voltage ◽

Blocking Voltage ◽

Effect Transistor

Results are presented for the silicon carbide (SiC) vertical channel junction field effect transistor (VJFET) fabricated based on in-house SiC epitaxial wafer suitable for power devices. We have demonstrated continuous improvement in blocking voltage, forward drain current under high temperature. The SiC VJFET device’s current density is 360 A/cm2 and current is 11 A at VG= 3 V and VD = 2 V, with related specific on-resistance 5.5 mΩ·cm2. The device exceeds 1200 V at gate bias VG = -10V. The current of the SiC VJFET device is 4 A and the reverse voltage is 1200V at the 200 °C high temperature.

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