(Invited) Monolithic Integration of III-V Semiconductors by Selective Area Growth on Si(001) Substrate: Epitaxy Challenges & Applications

2015 ◽  
Vol 66 (4) ◽  
pp. 107-116 ◽  
Author(s):  
C. Merckling ◽  
S. Jiang ◽  
Z. Liu ◽  
N. Waldron ◽  
G. Boccardi ◽  
...  
Keyword(s):  
Monolithic Integration ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth

Selective area growth of III–V nanowires and their heterostructures on silicon in a nanotube template: towards monolithic integration of nano-devices

2013 ◽  
Vol 24 (22) ◽  
pp. 225304 ◽  
Author(s):  
Pratyush Das Kanungo ◽  
Heinz Schmid ◽  
Mikael T Björk ◽  
Lynne M Gignac ◽  
Chris Breslin ◽  
...  
Keyword(s):  
Monolithic Integration ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth

scholarly journals Monolithic integration of InP on Si by molten alloy driven selective area epitaxial growth

Nanoscale ◽  
2020 ◽  
Vol 12 (46) ◽  
pp. 23780-23788
Author(s):  
Dmitrii V. Viazmitinov ◽  
Yury Berdnikov ◽  
Shima Kadkhodazadeh ◽  
Anna Dragunova ◽  
Nickolay Sibirev ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Monolithic Integration ◽  
Molten Alloy ◽  
Selective Area Growth ◽  
New Approach ◽  
Organic Vapor ◽  
Selective Area ◽  
Area Growth ◽  
Metal Organic ◽  
Silicon Based

We report a new approach for monolithic integration of III–V materials into silicon, based on selective area growth and driven by a molten alloy in metal–organic vapor phase epitaxy.

scholarly journals Selective-area growth and optical properties of GaN nanowires on patterned SiOx/Si substrates

2021 ◽  
Vol 1851 (1) ◽  
pp. 012006
Author(s):  
V O Gridchin ◽  
R R Reznik ◽  
K P Kotlyar ◽  
A S Dragunova ◽  
L N Dvoretckaia ◽  
...  
Keyword(s):  
Optical Properties ◽  
Selective Area Growth ◽  
Si Substrates ◽  
Gan Nanowires ◽  
Selective Area ◽  
Area Growth

scholarly journals Fully in situ Nb/InAs-nanowire Josephson junctions by selective-area growth and shadow evaporation

2021 ◽  
Author(s):  
Pujitha Perla ◽  
H. Aruni Fonseka ◽  
Patrick Zellekens ◽  
Russell Deacon ◽  
Yisong Han ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Josephson Junctions ◽  
Quantum Circuits ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth ◽  
Shadow Evaporation ◽  
Superconducting Quantum Circuits

Nb/InAs-nanowire Josephson junctions are fabricated in situ by a special shadow evaporation scheme for the superconducting Nb electrode. The junctions are interesting candidates for superconducting quantum circuits requiring large magnetic fields.

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