scholarly journals Selective-area growth and optical properties of GaN nanowires on patterned SiOx/Si substrates

2021 ◽  
Vol 1851 (1) ◽  
pp. 012006
Author(s):  
V O Gridchin ◽  
R R Reznik ◽  
K P Kotlyar ◽  
A S Dragunova ◽  
L N Dvoretckaia ◽  
...  
Keyword(s):  
Optical Properties ◽  
Selective Area Growth ◽  
Si Substrates ◽  
Gan Nanowires ◽  
Selective Area ◽  
Area Growth

scholarly journals Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes

2015 ◽  
Vol 26 (8) ◽  
pp. 085605 ◽  
Author(s):  
M Musolino ◽  
A Tahraoui ◽  
S Fernández-Garrido ◽  
O Brandt ◽  
A Trampert ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Selective Area Growth ◽  
Light Emitting ◽  
Si Substrates ◽  
Gan Nanowires ◽  
Selective Area ◽  
Area Growth

Selective-Area Growth of GaN Nanowires on Patterned SiOx/Si Substrates by Molecular Beam Epitaxy

2020 ◽  
Vol 46 (11) ◽  
pp. 1080-1083
Author(s):  
V. O. Gridchin ◽  
K. P. Kotlyar ◽  
R. R. Reznik ◽  
L. N. Dvoretskaya ◽  
A. V. Parfen’eva ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Selective Area Growth ◽  
Si Substrates ◽  
Gan Nanowires ◽  
Selective Area ◽  
Area Growth

scholarly journals Селективный рост методом молекулярно-пучковой эпитаксии массивов нитевидных нанокристаллов GaN на процессированных SiO-=SUB=-x-=/SUB=-/Si-подложках

2020 ◽  
Vol 46 (21) ◽  
pp. 32
Author(s):  
В.О. Гридчин ◽  
К.П. Котляр ◽  
Р.Р. Резник ◽  
Л.Н. Дворецкая ◽  
А.В. Парфеньева ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Growth Parameters ◽  
Optimal Growth ◽  
Morphological Properties ◽  
Selective Area Growth ◽  
Si Substrates ◽  
Gan Nanowires ◽  
Selective Area ◽  
Area Growth ◽  
Seed Layers

We present the results on the selective-area growth of GaN nanowires using a molecular beam epitaxy technique on patterned SiOx/Si substrates without any seed layers. The patterned SiOx/Si substrates were prepared by the simple microlens photolithography method. The influence of the substrate temperature on the morphological properties of GaN nanowires was investigated. The optimal growth parameters for the selective-area growth of GaN nanowires were experimentally determined.

Selective Area Growth by Hydride Vapor Phase Epitaxy and Optical Properties of InAs Nanowire Arrays

2021 ◽  
Author(s):  
Gabin Grégoire ◽  
Mohammed Zeghouane ◽  
Curtis Goosney ◽  
Nebile Isik Goktas ◽  
Philipp Staudinger ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Nanowire Arrays ◽  
Hydride Vapor Phase Epitaxy ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth

scholarly journals Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) Substrates

Crystals ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 366 ◽  
Author(s):  
Alexana Roshko ◽  
Matt Brubaker ◽  
Paul Blanchard ◽  
Todd Harvey ◽  
Kris Bertness
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Buffer Layers ◽  
Selective Area Growth ◽  
Gan Nanowires ◽  
Selective Area ◽  
Area Growth ◽  
Eutectic Formation

Selective area growth (SAG) of GaN nanowires and nanowalls on Si(111) substrates with AlN and GaN buffer layers grown by plasma-assisted molecular beam epitaxy was studied. For N-polar samples filling of SAG features increased with decreasing lattice mismatch between the SAG and buffer. Defects related to Al–Si eutectic formation were observed in all samples, irrespective of lattice mismatch and buffer layer polarity. Eutectic related defects in the Si surface caused voids in N-polar samples, but not in metal-polar samples. Likewise, inversion domains were present in N-polar, but not metal-polar samples. The morphology of Ga-polar GaN SAG on nitride buffered Si(111) was similar to that of homoepitaxial GaN SAG.

Selective area growth of GaN microstructures on patterned (111) and (001) Si substrates

2001 ◽  
Vol 230 (3-4) ◽  
pp. 346-350 ◽  
Author(s):  
Y. Honda ◽  
Y. Kawaguchi ◽  
Y. Ohtake ◽  
S. Tanaka ◽  
M. Yamaguchi ◽  
...  
Keyword(s):  
Selective Area Growth ◽  
Si Substrates ◽  
Selective Area ◽  
Area Growth

Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy

2016 ◽  
Vol 119 (22) ◽  
pp. 224305 ◽  
Author(s):  
J. E. Kruse ◽  
L. Lymperakis ◽  
S. Eftychis ◽  
A. Adikimenakis ◽  
G. Doundoulakis ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Selective Area Growth ◽  
Gan Nanowires ◽  
Selective Area ◽  
Area Growth

GaAs Epitaxial Growth by ECR-MBE

1991 ◽  
Vol 223 ◽  
Author(s):  
Naoto Kondo ◽  
Yasushi Nanishi ◽  
Tomohiro Shibata ◽  
Norio Yamamoto ◽  
Masatomo Fujimoto
Keyword(s):  
Low Temperatures ◽  
Electron Cyclotron Resonance ◽  
Hydrogen Plasma ◽  
Surface Cleaning ◽  
Selective Area Growth ◽  
Desorption Process ◽  
Si Substrates ◽  
Selective Area ◽  
Area Growth ◽  
A New Technique

ABSTRACTElectron-cyclotron-resonance plasma-excited molecular beam epitaxy (ECR-MBE) is a new technique for GaAs growth. This paper describes surface cleaning of GaAs and Si substrates at fairly low temperatures using hydrogen plasma, low temperature growth of GaAs on both substrates, and selective area growth of GaAs on both substrates partially covered with a silicon nitride (SiN) mask. The ability to clean and grow at low temperatures-assumed to be a benefit of using energetic particles—should permit us to grow layers on processed GaAs and/or Si substrates. The electrical properties of grown layers are also described. Selective area growth has been successfully carried out with no deposit on the mask or irregular growth at the mask edge. The desorption process introduced by impinging ions is found to play an important role in the selective area growth.

Dislocation filtering and polarity in the selective area growth of GaN nanowires by continuous-flow metal organic vapor phase epitaxy

2015 ◽  
Vol 9 (1) ◽  
pp. 015502 ◽  
Author(s):  
Pierre-Marie Coulon ◽  
Blandine Alloing ◽  
Virginie Brändli ◽  
Philippe Vennéguès ◽  
Mathieu Leroux ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Continuous Flow ◽  
Vapor Phase Epitaxy ◽  
Selective Area Growth ◽  
Organic Vapor ◽  
Gan Nanowires ◽  
Selective Area ◽  
Area Growth ◽  
Metal Organic
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