Biaxial Stress Evaluation in SiGe Epitaxially Grown on Ge Substrate by Oil-Immersion Raman Spectroscopy

2015 ◽  
Vol 69 (10) ◽  
pp. 81-87 ◽  
Author(s):  
K. Takeuchi ◽  
D. Kosemura ◽  
S. Yamamoto ◽  
M. Tomita ◽  
K. Usuda ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Biaxial Stress ◽  
Stress Evaluation ◽  
Oil Immersion

Biaxial stress evaluation in GeSn film epitaxially grown on Ge substrate by oil-immersion Raman spectroscopy

2016 ◽  
Vol 55 (9) ◽  
pp. 091301 ◽  
Author(s):  
Kazuma Takeuchi ◽  
Kohei Suda ◽  
Ryo Yokogawa ◽  
Koji Usuda ◽  
Naomi Sawamoto ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Biaxial Stress ◽  
Stress Evaluation ◽  
Oil Immersion

Evaluation of Anisotropic Biaxial Stress in Si1-XGex/Ge Mesa-Structure by Oil-Immersion Raman Spectroscopy

2015 ◽  
Vol 66 (4) ◽  
pp. 39-45 ◽  
Author(s):  
S. Yamamoto ◽  
K. Takeuchi ◽  
R. Yokogawa ◽  
M. Tomita ◽  
D. Kosemura ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Biaxial Stress ◽  
Mesa Structure ◽  
Oil Immersion

Pattern-dependent anisotropic stress evaluation in SiGe epitaxially grown on a Si substrate with selective Ar+ion implantation using oil-immersion Raman spectroscopy

2017 ◽  
Vol 56 (5) ◽  
pp. 051301
Author(s):  
Shotaro Yamamoto ◽  
Daisuke Kosemura ◽  
Kazuma Takeuchi ◽  
Seiya Ishihara ◽  
Kentarou Sawano ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Ion Implantation ◽  
Si Substrate ◽  
Stress Evaluation ◽  
Anisotropic Stress ◽  
Oil Immersion

Stress evaluation induced by wiggling silicon nitride fine pattern using Raman spectroscopy

2020 ◽  
Vol 59 (SI) ◽  
pp. SIIF03
Author(s):  
Masato Koharada ◽  
Ryo Yokogawa ◽  
Naomi Sawamoto ◽  
Kazutoshi Yoshioka ◽  
Atsushi Ogura
Keyword(s):  
Raman Spectroscopy ◽  
Silicon Nitride ◽  
Stress Evaluation ◽  
Fine Pattern

Evaluation of Residual Stresses in Thin Films by Means of Micro-Raman Spectroscopy

1997 ◽  
Vol 505 ◽  
Author(s):  
Kazuyuki Mizuhara ◽  
Shinichi Takahashi ◽  
Jyunichi Kurokawa ◽  
Noboru Morita ◽  
Yoshitaro Yoshida
Keyword(s):  
Raman Spectroscopy ◽  
Temperature Effects ◽  
Simultaneous Observation ◽  
Stress Evaluation ◽  
Advantages And Disadvantages ◽  
Micro Raman Spectroscopy ◽  
Boron Doped ◽  
Doped Silicon ◽  
Fluid Cooling ◽  
Anti Stokes

ABSTRACTThe effects of temperatures on the stress evaluation of boron doped silicon in solid and film forms are investigated. Several techniques, such as fluid cooling to eliminate the temperature raise and/or simultaneous observation of Stokes and anti Stokes peaks to compensate the temperature effects, are applied. The advantages and disadvantages of each method and the abilities and limits of these techniques are discussed.

Evaluation of Anisotropic Biaxial Stress by Raman Spectroscopy with a High Numerical Aperture Immersion Objective Lens

2010 ◽  
Vol 49 (4) ◽  
pp. 04DA21 ◽  
Author(s):  
Daisuke Kosemura ◽  
Munehisa Takei ◽  
Kohki Nagata ◽  
Hiroaki Akamatsu ◽  
Ryosuke Shimidzu ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Numerical Aperture ◽  
Biaxial Stress ◽  
Objective Lens ◽  
High Numerical Aperture
Sign in / Sign up

Export Citation Format

Share Document